ISC011N03L5SATMA1 vs BSC011N03LSATMA1 对比
详细并排对比 ISC011N03L5SATMA1 出自 Infineon 和 BSC011N03LSATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | ISC011N03L5SATMA1 | BSC011N03LSATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.47 | $0.54 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 / StrongIRFET 30 V | — |
| 晶体管类型 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) @ Ta=25C | 37 A | — |
| Continuous Drain Current (ID) @ Tc=25C | 100 A | — |
| Power Dissipation (PD) @ Ta=25C | 2.5 W | — |
| Power Dissipation (PD) @ Tc=25C | 96 W | — |
| 封装 | PG-TDSON-8-1 (TDSON EP, 8-pin, exposed pad) | PG-TDSON-8-1 (SuperSO8) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | -55 C to +175 C (TJ) | — |
| Technology | OptiMOS 5 trench MOSFET | — |
| Gate Drive | Logic-level compatible | — |
| RoHS 状态 | Compliant | Compliant |
| MSL 等级 | 1 (per JEDEC J-STD-020) | 1 |
| Product Series | — | OptiMOS 30V |
| Polarity | — | N-Channel |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| Continuous Drain Current (ID) at TA=25C | — | 37 A |
| Pulsed Drain Current (IDM) | — | 100 A (TC) |
| On-State Resistance (RDS(on)) at VGS=10V | — | 1.1 mOhm (typ) |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Gate Threshold Voltage (VGS(th)) | — | 1.0 V to 2.2 V (typ 1.6 V) |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge Qg] |
| Power Dissipation (PD) at TC=25C | — | 96 W |
| Power Dissipation (PD) at TA=25C | — | 2.5 W |
| 工作温度范围 | — | -55C to +150C |