ISC011N03L5SATMA1 vs BSC011N03LSATMA1 Comparison
Detailed side-by-side comparison of ISC011N03L5SATMA1 by Infineon and BSC011N03LSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | ISC011N03L5SATMA1 | BSC011N03LSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 / StrongIRFET 30 V | — |
| Transistor Type | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) @ Ta=25C | 37 A | — |
| Continuous Drain Current (ID) @ Tc=25C | 100 A | — |
| Power Dissipation (PD) @ Ta=25C | 2.5 W | — |
| Power Dissipation (PD) @ Tc=25C | 96 W | — |
| Package | PG-TDSON-8-1 (TDSON EP, 8-pin, exposed pad) | PG-TDSON-8-1 (SuperSO8) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -55 C to +175 C (TJ) | — |
| Technology | OptiMOS 5 trench MOSFET | — |
| Gate Drive | Logic-level compatible | — |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 |
| Product Series | — | OptiMOS 30V |
| Polarity | — | N-Channel |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| Continuous Drain Current (ID) at TA=25C | — | 37 A |
| Pulsed Drain Current (IDM) | — | 100 A (TC) |
| On-State Resistance (RDS(on)) at VGS=10V | — | 1.1 mOhm (typ) |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Gate Threshold Voltage (VGS(th)) | — | 1.0 V to 2.2 V (typ 1.6 V) |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge Qg] |
| Power Dissipation (PD) at TC=25C | — | 96 W |
| Power Dissipation (PD) at TA=25C | — | 2.5 W |
| Operating Temperature Range | — | -55C to +150C |