ISC015N06NM5LF2ATMA1 vs IPT008N06NM5LFATMA1 对比

详细并排对比 ISC015N06NM5LF2ATMA1 出自 Infineon 和 IPT008N06NM5LFATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
ISC015N06NM5LF2ATMA1 ISC015N06NM5LF2ATMA1 - 60V 1.5mΩ OptiMOS 5 Linear FET | Infineon

ISC015N06NM5LF2ATMA1 - 60V 1.5mΩ OptiMOS 5 Linear FET | Infineon

ISC015N06NM5LF2ATMA1 ✓ 量产中
Infineon
IPT008N06NM5LFATMA1 IPT008N06NM5LFATMA1 - 60V 454A 0.8mΩ N-Ch MOSFET HSOF-8 | Infineon

IPT008N06NM5LFATMA1 - 60V 454A 0.8mΩ N-Ch MOSFET HSOF-8 | Infineon

IPT008N06NM5LFATMA1 ✓ 量产中

规格对比

参数 ISC015N06NM5LF2ATMA1 IPT008N06NM5LFATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.21 $5.40
Technology OptiMOS 5 Linear FET 2 (N-Channel) Trench MOSFET (OptiMOS 5)
Drain-Source Voltage (VDS) 60 V 60 V
Continuous Drain Current (ID) at Ta 32 A —
Pulsed Drain Current (IDM) at Tc 275 A —
Power Dissipation (PD) at Ta 3 W —
Power Dissipation (PD) at Tc 217 W —
On-Resistance RDS(on) max at VGS=10V 1.55 mΩ —
On-Resistance RDS(on) at VGS=10V (typ) 1.3 mΩ —
Gate Threshold Voltage (VGS(th)) 3 V —
Gate-Source Voltage Rating ±20 V —
Reverse Recovery Charge (Qrr) 1.3 nC —
Input Capacitance (Ciss) 6.9 nF —
Output Capacitance (Coss) 1.3 nF —
Reverse Transfer Capacitance (Crss) 55 pF —
Total Gate Charge (Qg) 90 nC —
工作结温 -55 °C to +175 °C —
封装 PG-TDSON-8 FL (5x6 mm) PG-HSOF-8 (single, flat-lead)
安装类型 Surface Mount Surface Mount
RoHS Compliant —
Manufacturer — Infineon Technologies
Part Family — OptiMOS 5 / Linear FET
晶体管类型 — N-Channel MOSFET
Continuous Drain Current (ID, Tc) — 454 A
脉冲漏极电流 — [DATA_NEEDED: pulsed ID]
On-Resistance RDS(on) at VGS=10 V — 0.8 mΩ
Gate-Source Threshold Voltage VGS(th) — 3.6 V (typ, 250 µA test)
Power Dissipation (Tc) — 278 W
工作温度范围 — -55 °C to +175 °C (TJ)
Gate Drive (recommended) — 10 V (logic-level compatible above 4.5 V VGS)
MSL 等级 — 1 (per JEDEC J-STD-020)
RoHS 状态 — Compliant
REACH Status — Compliant
AEC-Q100 — not_qualified (industrial-grade by default)

数据手册与资源

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