ISC015N06NM5LF2ATMA1 vs IPT015N10NF2SATMA1 对比
详细并排对比 ISC015N06NM5LF2ATMA1 出自 Infineon 和 IPT015N10NF2SATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
ISC015N06NM5LF2ATMA1 - 60V 1.5mΩ OptiMOS 5 Linear FET | Infineon
ISC015N06NM5LF2ATMA1 ✓ 量产中规格对比
| 参数 | ISC015N06NM5LF2ATMA1 | IPT015N10NF2SATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.21 | $3.10 |
| Technology | OptiMOS 5 Linear FET 2 (N-Channel) | OptiMOS trench, N-channel enhancement |
| Drain-Source Voltage (VDS) | 60 V | 100 V |
| Continuous Drain Current (ID) at Ta | 32 A | — |
| Pulsed Drain Current (IDM) at Tc | 275 A | — |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 217 W | — |
| On-Resistance RDS(on) max at VGS=10V | 1.55 mΩ | — |
| On-Resistance RDS(on) at VGS=10V (typ) | 1.3 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 3 V | — |
| Gate-Source Voltage Rating | ±20 V | — |
| Reverse Recovery Charge (Qrr) | 1.3 nC | — |
| Input Capacitance (Ciss) | 6.9 nF | — |
| Output Capacitance (Coss) | 1.3 nF | — |
| Reverse Transfer Capacitance (Crss) | 55 pF | — |
| Total Gate Charge (Qg) | 90 nC | — |
| 工作结温 | -55 °C to +175 °C | — |
| 封装 | PG-TDSON-8 FL (5x6 mm) | PG-HSOF-8-10 (9-pin, 8+tab) |
| 安装类型 | Surface Mount | Surface Mount |
| RoHS | Compliant | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID, Tc) | — | 315 A |
| Continuous Drain Current (ID, Ta) | — | 35 A |
| On-Resistance (RDS(on)) at VGS=10V | — | 1.5 mΩ |
| Gate-Source Threshold (VGS(th)) | — | 3.8 V at 267 µA |
| Total Power Dissipation (Ta) | — | 3.8 W |
| Total Power Dissipation (Tc) | — | 300 W |
| 工作温度范围 | — | -55 °C to +175 °C |
| Gate Drive Voltage (typ) | — | 10 V |
| 单脉冲雪崩能量 | — | [DATA_NEEDED: EAS value] |
| RoHS 状态 | — | Compliant |