ISC015N06NM5LF2ATMA1 vs IPT015N10NF2SATMA1 Comparison

Detailed side-by-side comparison of ISC015N06NM5LF2ATMA1 by Infineon and IPT015N10NF2SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter ISC015N06NM5LF2ATMA1 IPT015N10NF2SATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Technology OptiMOS 5 Linear FET 2 (N-Channel) OptiMOS trench, N-channel enhancement
Drain-Source Voltage (VDS) 60 V 100 V
Continuous Drain Current (ID) at Ta 32 A —
Pulsed Drain Current (IDM) at Tc 275 A —
Power Dissipation (PD) at Ta 3 W —
Power Dissipation (PD) at Tc 217 W —
On-Resistance RDS(on) max at VGS=10V 1.55 mΩ —
On-Resistance RDS(on) at VGS=10V (typ) 1.3 mΩ —
Gate Threshold Voltage (VGS(th)) 3 V —
Gate-Source Voltage Rating ±20 V —
Reverse Recovery Charge (Qrr) 1.3 nC —
Input Capacitance (Ciss) 6.9 nF —
Output Capacitance (Coss) 1.3 nF —
Reverse Transfer Capacitance (Crss) 55 pF —
Total Gate Charge (Qg) 90 nC —
Operating Junction Temperature -55 °C to +175 °C —
Package PG-TDSON-8 FL (5x6 mm) PG-HSOF-8-10 (9-pin, 8+tab)
Mounting Type Surface Mount Surface Mount
RoHS Compliant —
FET Type — N-Channel
Continuous Drain Current (ID, Tc) — 315 A
Continuous Drain Current (ID, Ta) — 35 A
On-Resistance (RDS(on)) at VGS=10V — 1.5 mΩ
Gate-Source Threshold (VGS(th)) — 3.8 V at 267 µA
Total Power Dissipation (Ta) — 3.8 W
Total Power Dissipation (Tc) — 300 W
Operating Temperature Range — -55 °C to +175 °C
Gate Drive Voltage (typ) — 10 V
Single Pulse Avalanche Energy — [DATA_NEEDED: EAS value]
RoHS Status — Compliant

Datasheets & Resources

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