ISC019N08NM7ATMA1 vs IQE050N08NM5CGATMA1 对比
详细并排对比 ISC019N08NM7ATMA1 出自 Infineon 和 IQE050N08NM5CGATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | ISC019N08NM7ATMA1 | IQE050N08NM5CGATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.18 | $1.75 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 7 | — |
| 晶体管类型 | N-Channel MOSFET | — |
| Technology | Trench MOSFET (OptiMOS 7) | OptiMOS 5 (Source-Down) |
| Drain-to-Source Voltage (VDS) | 80 V | — |
| Gate-to-Source Voltage (VGS) | [DATA_NEEDED: max VGS rating] | — |
| Drain Current (ID), TC=25°C | 209 A | — |
| Drain Current (ID), TA=25°C | 26 A | — |
| On-Resistance RDS(on) max @ VGS=10V | [DATA_NEEDED: RDS(on) max] | — |
| On-Resistance RDS(on) typ @ VGS=10V | 1.9 mΩ | — |
| Power Dissipation (PD), TC=25°C | 188 W | — |
| Power Dissipation (PD), TA=25°C | 3 W (6 cm² FR4) | — |
| 工作结温 | -55 °C to +175 °C | — |
| 封装 | PG-TDSON-8-43 (SuperSO8) | PG-TTFN-9-1 (Surface Mount) |
| 安装类型 | Surface Mount | Surface Mount |
| 无卤 | Yes | — |
| RoHS 状态 | Compliant | Compliant |
| MSL 等级 | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL rating] |
| Gate Threshold VGS(th) | [DATA_NEEDED: VGS(th)] | — |
| Total Gate Charge QG | [DATA_NEEDED: QG] | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (Ta) | — | 16 A |
| Continuous Drain Current (Tc) | — | 101 A |
| On-Resistance RDS(on) Max | — | 5.0 mΩ |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 100 W |
| Gate Threshold Vgs(th) Typ | — | [DATA_NEEDED: Vgs(th) typical value] |
| 工作温度 | — | -55°C to +175°C (TJ max) |
| Total Gate Charge Qg Typ | — | [DATA_NEEDED: total gate charge Qg typical] |