ISC019N08NM7ATMA1 vs IQE050N08NM5CGATMA1 Comparison
Detailed side-by-side comparison of ISC019N08NM7ATMA1 by Infineon and IQE050N08NM5CGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE050N08NM5CGATMA1
IQE050N08NM5CGATMA1 - 80V N-Ch MOSFET 5mΞ© Source-Down | Infineon
IQE050N08NM5CGATMA1 β ActiveSpecification Comparison
| Parameter | ISC019N08NM7ATMA1 | IQE050N08NM5CGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.18 | $1.75 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOS 7 | β |
| Transistor Type | N-Channel MOSFET | β |
| Technology | Trench MOSFET (OptiMOS 7) | OptiMOS 5 (Source-Down) |
| Drain-to-Source Voltage (VDS) | 80 V | β |
| Gate-to-Source Voltage (VGS) | [DATA_NEEDED: max VGS rating] | β |
| Drain Current (ID), TC=25Β°C | 209 A | β |
| Drain Current (ID), TA=25Β°C | 26 A | β |
| On-Resistance RDS(on) max @ VGS=10V | [DATA_NEEDED: RDS(on) max] | β |
| On-Resistance RDS(on) typ @ VGS=10V | 1.9 mΞ© | β |
| Power Dissipation (PD), TC=25Β°C | 188 W | β |
| Power Dissipation (PD), TA=25Β°C | 3 W (6 cmΒ² FR4) | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | β |
| Package | PG-TDSON-8-43 (SuperSO8) | PG-TTFN-9-1 (Surface Mount) |
| Mounting Type | Surface Mount | Surface Mount |
| Halogen-Free | Yes | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL rating] |
| Gate Threshold VGS(th) | [DATA_NEEDED: VGS(th)] | β |
| Total Gate Charge QG | [DATA_NEEDED: QG] | β |
| FET Type | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 80 V |
| Continuous Drain Current (Ta) | β | 16 A |
| Continuous Drain Current (Tc) | β | 101 A |
| On-Resistance RDS(on) Max | β | 5.0 mΞ© |
| Power Dissipation (Ta) | β | 2.5 W |
| Power Dissipation (Tc) | β | 100 W |
| Gate Threshold Vgs(th) Typ | β | [DATA_NEEDED: Vgs(th) typical value] |
| Operating Temperature | β | -55Β°C to +175Β°C (TJ max) |
| Total Gate Charge Qg Typ | β | [DATA_NEEDED: total gate charge Qg typical] |