ISC030N12NM6ATMA1 vs ISC151N08NM6ATMA1 对比
详细并排对比 ISC030N12NM6ATMA1 出自 Infineon 和 ISC151N08NM6ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | ISC030N12NM6ATMA1 | ISC151N08NM6ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.62 | $0.78 |
| 晶体管类型 | N-Channel MOSFET | N-Channel MOSFET |
| Technology | OptiMOS 6 (trench) | OptiMOS 6 |
| Drain-Source Voltage (VDS max) | 120 V | — |
| Continuous Drain Current (ID, Tc=25 C) | 194 A | — |
| Continuous Drain Current (ID, Ta) | 21 A | — |
| On-Resistance RDS(on) max | 3.4 mOhm @ VGS=10 V | 15.1 mΩ |
| On-Resistance RDS(on) typical | 3.0 mOhm @ VGS=10 V | — |
| 功耗（TC=25°C） | 250 W | — |
| Power Dissipation (Ta) | 3 W | — |
| 封装 | PG-TSON-8-3 (SuperSO8 5x6 mm) | PG-TDSON-8 FL |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | -55 C to +175 C (junction) | -55 °C to +175 °C |
| Gate Drive Voltage (recommended) | 10 V (full RDS(on)) | — |
| Configuration | Single N-channel, source-down | — |
| Packaging (suffix) | Tape & Reel (ATMA1) | — |
| RoHS | Compliant | — |
| Drain-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (TA=25°C) | — | 9.2 A |
| 连续漏极电流（TC=25°C） | — | 37 A |
| Power Dissipation (TA) | — | 3 W |
| Power Dissipation (TC) | — | 48 W |
| Gate Threshold Voltage VGS(th) typ | — | 3.5 V |
| 引脚数 | — | 8 |
| Channel Mode | — | Enhancement |
| RoHS 状态 | — | Compliant |