ISC030N12NM6ATMA1 vs ISC151N08NM6ATMA1 Comparison
Detailed side-by-side comparison of ISC030N12NM6ATMA1 by Infineon and ISC151N08NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC030N12NM6ATMA1
ISC030N12NM6ATMA1 - 120V 194A OptiMOS 6 N-Ch MOSFET | Infineon
ISC030N12NM6ATMA1 β ActiveInfineon
ISC151N08NM6ATMA1
ISC151N08NM6ATMA1 - 80V 37A N-Ch MOSFET | Infineon TDSON-8
ISC151N08NM6ATMA1 β ActiveSpecification Comparison
| Parameter | ISC030N12NM6ATMA1 | ISC151N08NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.62 | $0.78 |
| Transistor Type | N-Channel MOSFET | N-Channel MOSFET |
| Technology | OptiMOS 6 (trench) | OptiMOS 6 |
| Drain-Source Voltage (VDS max) | 120 V | β |
| Continuous Drain Current (ID, Tc=25 C) | 194 A | β |
| Continuous Drain Current (ID, Ta) | 21 A | β |
| On-Resistance RDS(on) max | 3.4 mOhm @ VGS=10 V | 15.1 mΞ© |
| On-Resistance RDS(on) typical | 3.0 mOhm @ VGS=10 V | β |
| Power Dissipation (Tc=25 C) | 250 W | β |
| Power Dissipation (Ta) | 3 W | β |
| Package | PG-TSON-8-3 (SuperSO8 5x6 mm) | PG-TDSON-8 FL |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -55 C to +175 C (junction) | -55 Β°C to +175 Β°C |
| Gate Drive Voltage (recommended) | 10 V (full RDS(on)) | β |
| Configuration | Single N-channel, source-down | β |
| Packaging (suffix) | Tape & Reel (ATMA1) | β |
| RoHS | Compliant | β |
| Drain-Source Voltage (VDS) | β | 80 V |
| Continuous Drain Current (TA=25Β°C) | β | 9.2 A |
| Continuous Drain Current (TC=25Β°C) | β | 37 A |
| Power Dissipation (TA) | β | 3 W |
| Power Dissipation (TC) | β | 48 W |
| Gate Threshold Voltage VGS(th) typ | β | 3.5 V |
| Number of Pins | β | 8 |
| Channel Mode | β | Enhancement |
| RoHS Status | β | Compliant |