ISC046N13NM6ATMA1 vs ISC015N04NM5ATMA1 对比
详细并排对比 ISC046N13NM6ATMA1 出自 Infineon 和 ISC015N04NM5ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | ISC046N13NM6ATMA1 | ISC015N04NM5ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.08 | $0.98 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 6 | — |
| 晶体管类型 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 135 V | 40 V |
| Continuous Drain Current (ID) at TA | 17 A | — |
| Continuous Drain Current (ID) at TC | 142 A | — |
| Power Dissipation (PD) at TA | 3 W | — |
| Power Dissipation (PD) at TC | 211 W | — |
| 封装 / 外壳 | PG-TDSON-8 | PG-TDSON-8 FL (SuperSO8 5x6 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -55 C to +175 C | -55 C to +175 C (junction, per OptiMOS 5) |
| Technology | OptiMOS 6 trench MOSFET | OptiMOS 5 (trench MOSFET) |
| Gate Drive (recommended) | 10 V (typical) | — |
| RoHS 状态 | Compliant | Compliant |
| Packaging | Tape & Reel | — |
| Series | — | OptiMOS 5 40V Normal Level |
| FET Type | — | N-Channel |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | 3.4 V (typ) |
| R_DS(on) max | — | 1.5 mOhm @ VGS=10 V, ID=50 A |
| Continuous Drain Current (ID) at Ta=25C | — | 33 A |
| Continuous Drain Current (ID) at Tc=25C | — | 206 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed IDM rating] |
| Power Dissipation (Ta) | — | 3 W |
| Power Dissipation (Tc) | — | 115 W |
| 引脚数量 | — | 8 |
| MSL 等级 | — | 1 (per Infineon SuperSO8 family) |
| Drive Level | — | Normal Level (VGS(th) ~3.4 V) |