ISC052N03LF2SATMA1 vs ISC028N03LF2SATMA1 对比
详细并排对比 ISC052N03LF2SATMA1 出自 Infineon 和 ISC028N03LF2SATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | ISC052N03LF2SATMA1 | ISC028N03LF2SATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.35 | $0.86 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 30V | — |
| 晶体管类型 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at TA=25°C | 18 A | — |
| Continuous Drain Current (ID) at TC=25°C | 74 A | — |
| On-Resistance RDS(on) max at VGS=10V | 5.2 mΩ | 2.8 mOhm |
| Power Dissipation (PD) at TA=25°C | 3 W | — |
| Power Dissipation (PD) at TC=25°C | 52 W | — |
| 封装 | PG-TDSON-8-62 (TDSON EP) | PG-TDSON-8-62 (5x6 mm) with exposed pad |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -55°C to +150°C | — |
| Technology | Trench MOSFET (OptiMOS 5) | — |
| Polarity | N-Channel | — |
| 引脚数量 | 8 | — |
| RoHS 状态 | Compliant | — |
| MSL 等级 | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| Product Family | — | OptiMOS 5 30V |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) max | — | 30 V |
| Continuous Drain Current (ID) at TA=25C | — | 24 A |
| Continuous Drain Current (ID) at TC=25C | — | 128 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate Threshold Voltage VGS(th) typ | — | 2.35 V |
| Power Dissipation at TA | — | 3 W |
| Power Dissipation at TC | — | 83 W |
| 工作结温 | — | -55 C to +175 C |
| RoHS / Lead-Free | — | Yes (RoHS compliant) |