ISC052N03LF2SATMA1 vs ISC028N03LF2SATMA1 Comparison

Detailed side-by-side comparison of ISC052N03LF2SATMA1 by Infineon and ISC028N03LF2SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
ISC052N03LF2SATMA1

ISC052N03LF2SATMA1 - 30V N-Ch 74A OptiMOS 5 MOSFET | Infineon

ISC052N03LF2SATMA1 βœ“ Active
Infineon
ISC028N03LF2SATMA1

ISC028N03LF2SATMA1 - 30V 2.8mOhm N-Ch MOSFET | Infineon OptiMOS

ISC028N03LF2SATMA1 βœ“ Active

Specification Comparison

Parameter ISC052N03LF2SATMA1 ISC028N03LF2SATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.35 $0.86
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 30V β€”
Transistor Type N-Channel MOSFET β€”
Drain-Source Voltage (VDS) 30 V β€”
Continuous Drain Current (ID) at TA=25Β°C 18 A β€”
Continuous Drain Current (ID) at TC=25Β°C 74 A β€”
On-Resistance RDS(on) max at VGS=10V 5.2 mΞ© 2.8 mOhm
Power Dissipation (PD) at TA=25Β°C 3 W β€”
Power Dissipation (PD) at TC=25Β°C 52 W β€”
Package PG-TDSON-8-62 (TDSON EP) PG-TDSON-8-62 (5x6 mm) with exposed pad
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55Β°C to +150Β°C β€”
Technology Trench MOSFET (OptiMOS 5) β€”
Polarity N-Channel β€”
Pin Count 8 β€”
RoHS Status Compliant β€”
MSL Level [DATA_NEEDED: MSL rating] 1 (per JEDEC J-STD-020)
Product Family β€” OptiMOS 5 30V
Polarity / Channel Type β€” N-Channel
Drain-Source Voltage (VDS) max β€” 30 V
Continuous Drain Current (ID) at TA=25C β€” 24 A
Continuous Drain Current (ID) at TC=25C β€” 128 A
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: pulsed drain current]
Gate Threshold Voltage VGS(th) typ β€” 2.35 V
Power Dissipation at TA β€” 3 W
Power Dissipation at TC β€” 83 W
Operating Junction Temperature β€” -55 C to +175 C
RoHS / Lead-Free β€” Yes (RoHS compliant)

Datasheets & Resources

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