ISC058N04NM5ATMA1 vs BSC059N04LSGATMA1 对比
详细并排对比 ISC058N04NM5ATMA1 出自 Infineon 和 BSC059N04LSGATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | ISC058N04NM5ATMA1 | BSC059N04LSGATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.60 | $0.39 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 5 40V Normal Level | — |
| 晶体管类型 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID, Tc=25C) | 63 A | 73 A |
| Continuous Drain Current (ID, Ta=25C) | 17 A | 16 A |
| On-Resistance Rds(on) max @ VGS=10V, ID=31A | 5.8 mOhm | — |
| Gate Threshold Voltage VGS(th) typ | 3.4 V | — |
| Power Dissipation (TA=25C) | 3 W | — |
| Power Dissipation (TC=25C) | 42 W | — |
| 封装 | PG-TDSON-8 FL (SuperSO8 5x6 mm) | PG-TDSON-8-5 (SuperSO8 5x6 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 trench MOSFET | OptiMOS 3 (N-channel trench MOSFET) |
| 工作温度范围 | -55C to +175C | -55 C to +150 C |
| RoHS Compliance | RoHS Compliant | — |
| MSL (Moisture Sensitivity Level) | MSL per JEDEC J-STD-020 | — |
| Gate Drive Level | Normal Level (10V VGS recommended) | — |
| On-State Resistance RDS(on) max @ VGS=10V | — | 5.9 mOhm |
| Power Dissipation (Tc=25C) | — | 50 W |
| Power Dissipation (Ta=25C) | — | 2.5 W |
| Gate-Source Threshold Voltage VGS(th) | — | 1.2 V to 2.0 V (typ) |
| Total Gate Charge Qg | — | [DATA_NEEDED: Qg total, typical nC] |
| MSL 等级 | — | 1 (per JEDEC J-STD-020) |
| RoHS 状态 | — | Compliant |
| REACH Status | — | Compliant |
| Channel Type | — | N-Channel |