ISC058N04NM5ATMA1 vs BSC059N04LSGATMA1 Comparison

Detailed side-by-side comparison of ISC058N04NM5ATMA1 by Infineon and BSC059N04LSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC059N04LSGATMA1 BSC059N04LSGATMA1 - 40V 73A 5.9mOhm N-Ch OptiMOS 3 | Infineon

BSC059N04LSGATMA1 - 40V 73A 5.9mOhm N-Ch OptiMOS 3 | Infineon

BSC059N04LSGATMA1 βœ“ Active

Specification Comparison

Parameter ISC058N04NM5ATMA1 BSC059N04LSGATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.60 $0.39
Manufacturer Infineon Technologies β€”
Product Family OptiMOS 5 40V Normal Level β€”
Transistor Type N-Channel MOSFET β€”
Drain-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID, Tc=25C) 63 A 73 A
Continuous Drain Current (ID, Ta=25C) 17 A 16 A
On-Resistance Rds(on) max @ VGS=10V, ID=31A 5.8 mOhm β€”
Gate Threshold Voltage VGS(th) typ 3.4 V β€”
Power Dissipation (TA=25C) 3 W β€”
Power Dissipation (TC=25C) 42 W β€”
Package PG-TDSON-8 FL (SuperSO8 5x6 mm) PG-TDSON-8-5 (SuperSO8 5x6 mm)
Mounting Type Surface Mount Surface Mount
Technology OptiMOS 5 trench MOSFET OptiMOS 3 (N-channel trench MOSFET)
Operating Temperature Range -55C to +175C -55 C to +150 C
RoHS Compliance RoHS Compliant β€”
MSL (Moisture Sensitivity Level) MSL per JEDEC J-STD-020 β€”
Gate Drive Level Normal Level (10V VGS recommended) β€”
On-State Resistance RDS(on) max @ VGS=10V β€” 5.9 mOhm
Power Dissipation (Tc=25C) β€” 50 W
Power Dissipation (Ta=25C) β€” 2.5 W
Gate-Source Threshold Voltage VGS(th) β€” 1.2 V to 2.0 V (typ)
Total Gate Charge Qg β€” [DATA_NEEDED: Qg total, typical nC]
MSL Level β€” 1 (per JEDEC J-STD-020)
RoHS Status β€” Compliant
REACH Status β€” Compliant
Channel Type β€” N-Channel

Datasheets & Resources

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