ISC151N08NM6ATMA1 vs IPB051N15NM6ATMA1 对比
详细并排对比 ISC151N08NM6ATMA1 出自 Infineon 和 IPB051N15NM6ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IPB051N15NM6ATMA1 - 150V 5.1mOhm OptiMOS 6 N-Channel MOSFET | Infineon
IPB051N15NM6ATMA1 ✓ 量产中规格对比
| 参数 | ISC151N08NM6ATMA1 | IPB051N15NM6ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.78 | $2.02 |
| 晶体管类型 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 80 V | 150 V |
| Continuous Drain Current (TA=25°C) | 9.2 A | — |
| 连续漏极电流（TC=25°C） | 37 A | — |
| Power Dissipation (TA) | 3 W | — |
| Power Dissipation (TC) | 48 W | — |
| On-Resistance RDS(on) max | 15.1 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | 3.5 V | — |
| Technology | OptiMOS 6 | — |
| 封装 | PG-TDSON-8 FL | — |
| 安装类型 | Surface Mount | Surface Mount |
| 引脚数 | 8 | — |
| Channel Mode | Enhancement | — |
| 工作温度 | -55 °C to +175 °C | — |
| RoHS 状态 | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 6 |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TA=25C | — | 18 A |
| Continuous Drain Current (ID) at TC=25C | — | 139 A |
| RDS(on) Typical at VGS=10 V | — | 5.1 mOhm |
| Gate Charge (Qg) Typical | — | 51 nC |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| Power Dissipation (PD) at TA=25C | — | 3.8 W |
| Power Dissipation (PD) at TC=25C | — | 234 W |
| 工作温度范围 | — | -55C to +175C |
| 封装 / 外壳 | — | PG-TO263-3-2 (D2PAK) |
| 引脚数量 | — | 3 (Drain, Source, Gate) |
| MSL 等级 | — | 1 (per JEDEC J-STD-020) |
| Avalanche Rated | — | Yes |