ISZ019N03L5SATMA1 vs BSC014N04LSATMA1 对比
详细并排对比 ISZ019N03L5SATMA1 出自 Infineon 和 BSC014N04LSATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
ISZ019N03L5SATMA1 - 30V 1.9mΩ OptiMOS 5 N-Channel MOSFET | Infineon
ISZ019N03L5SATMA1 ✓ 量产中
规格对比
| 参数 | ISZ019N03L5SATMA1 | BSC014N04LSATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.48 | $0.74 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 (<= 40V) | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 30 V | 40 V |
| Continuous Drain Current (ID) at TA=25C | 22 A | — |
| Continuous Drain Current (ID) at TC=25C | 40 A | — |
| RDS(on) at VGS=10V | 1.9 mΩ (typical, ID=20A) | — |
| Gate Threshold Voltage (VGS(th)) | 2 V (typical) | — |
| Gate-Source Voltage Rating (VGS) | ±20 V | — |
| Total Gate Charge (Qg) | 44 nC at VGS=10V | — |
| Input Capacitance (Ciss) | 2800 pF at VDS=15V | — |
| 封装 | PG-TSDSON-8-FL (5x6 mm) | SuperSO8 (TDSON-8 FL) 5x6 mm |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -55C to +175C (TJ max) | -55C to +175C |
| MSL 等级 | 1 (per JEDEC J-STD-020) | 1 (unlimited) |
| RoHS / REACH | Compliant | — |
| Avalanche Rated | Yes | — |
| RG-tested | 100% | — |
| Series | — | OptiMOS 5 |
| 晶体管类型 | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Ta | — | 32 A |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| RDS(on) max at VGS=10 V | — | 1.4 mOhm |
| Power Dissipation at Ta | — | 2.5 W |
| Power Dissipation at Tc | — | 96 W |
| Gate-Source Voltage (VGS) max | — | 20 V |
| Technology | — | Trench (OptiMOS 5, thin-wafer) |
| RoHS 状态 | — | Compliant |