JMTG100N06A vs JMTG070N06A 对比
详细并排对比 JMTG100N06A 出自 Jiejie Micro 和 JMTG070N06A 出自 Jiejie Micro。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | JMTG100N06A | JMTG070N06A |
|---|---|---|
| 品牌 | Jiejie Micro | Jiejie Micro |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.15 | $0.45 |
| Manufacturer | Jiangsu JieJie Microelectronics Co., Ltd | Jiejie Micro (JJW) |
| 晶体管类型 | N-Channel Power Trench MOSFET | — |
| Drain-Source Voltage V(DSS) | 60 V | — |
| Continuous Drain Current I(D) | 55 A (at V(GS)=10 V, T(C)=25 °C) | — |
| R(DS(on)) Typ @ V(GS)=10 V | 7.7 mΩ | — |
| R(DS(on)) Typ @ V(GS)=4.5 V | 8.9 mΩ | — |
| Gate Threshold Voltage V(GS(th)) Typ | 1.5 V | — |
| 封装 | PDFN5x6-8L (Power DFN 5×6 mm, 8 leads) | PDFN5x6-8L (Power DFN 5x6 mm, 8 leads) |
| 安装类型 | Surface Mount | Surface Mount (SMD) |
| Plating | Pb-free | — |
| 无卤 | Yes | — |
| RoHS | Compliant | — |
| UIS (Avalanche) Tested | 100 % | — |
| V(DS) Tested | 100 % | — |
| EAS Test Condition | T(J)=25 °C, V(DD)=30 V, V(G)=10 V, L=0.5 mH, R(g)=25 Ω, I(AS)=22 A | — |
| Primary Applications | Load Switch, PWM, DC-DC, Motor Drive | — |
| Part Number | — | JMTG070N06A |
| Polarity / Type | — | N-channel Enhancement Mode |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) | — | 70 A |
| On-Resistance RDS(ON) | — | < 6 mOhm @ VGS = 10 V |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) min/typ/max] |
| Gate Charge Qg | — | [DATA_NEEDED: total gate charge] |
| Technology | — | Advanced Trench MOSFET |
| Single Pulse Avalanche Energy (EAS) | — | IAS = 27 A at VDD = 30 V, L = 0.5 mH, Rg = 25 ohm (TJ = 25 degC) |
| Lead Status | — | Lead free / RoHS compliant |
| 工作温度范围 | — | [DATA_NEEDED: TJ max and operating range] |
| Thermal Resistance RthJA | — | [DATA_NEEDED: theta_JA] |
| Configuration | — | Single N-channel MOSFET |