K3KL2L20DM-JGCT vs K3KL8L80CM-MGCT 对比
详细并排对比 K3KL2L20DM-JGCT 出自 Samsung Electronics 和 K3KL8L80CM-MGCT 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K3KL2L20DM-JGCT | K3KL8L80CM-MGCT |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | DRAM |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $20.80 | $0.00 |
| 存储器类型 | LPDDR5X SDRAM | LPDDR5X SDRAM |
| Density | 48 Gb | 32 Gbit (4 GB) |
| 存储组织 | x64 | x32 |
| 数据速率 | 7500 Mbps | — |
| Supply Voltage (VDD1) | 1.8 V | — |
| Supply Voltage (VDD2) | 1.05 V | — |
| Supply Voltage (VDDQ) | 0.5 V | — |
| Core Voltage Rail | 0.9 V | — |
| 工作温度 | -25C to +85C | -25C to +85C |
| 封装 | 441-ball FBGA | 315-ball FBGA |
| 安装类型 | Surface Mount | Surface Mount |
| 接口 | LPDDR5X (JEDEC low-power DRAM interface) | LPDDR5X (JEDEC LPDDR5 extension) |
| Product Status | Mass Production | — |
| Generation | LPDDR5X (1.25x speed, 25% better power efficiency vs LPDDR5) | — |
| Application Segment | AI devices, automotive, mobile | Mobile, Automotive, On-device AI, PC |
| RoHS 状态 | unknown | Compliant (per JLCPCB listing) |
| Max Data Rate | — | 7500 Mbps |
| Clock Frequency | — | 3750 MHz |
| Core Supply Voltage (VDD) | — | 1.05 V |
| I/O Supply Voltage (VDDQ) | — | 900 mV (500 mV low-power mode) |
| VDD2 Supply Voltage | — | 1.8 V |
| Power Efficiency | — | ~20-25% improvement vs LPDDR5 (per Samsung) |
| MSL 等级 | — | [DATA_NEEDED: MSL Level] |