K3KL5L50DM-BGCU vs K3KL3L30CM-BGCU 对比
详细并排对比 K3KL5L50DM-BGCU 出自 Samsung Electronics 和 K3KL3L30CM-BGCU 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K3KL5L50DM-BGCU | K3KL3L30CM-BGCU |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.00 | $0.00 |
| 存储器类型 | LPDDR5X SDRAM | LPDDR5X SDRAM (Volatile DRAM) |
| Density | 128 Gb (16 GB) | — |
| 数据速率 | 8533 Mbps per pin | 8533 Mbps |
| 存储组织 | [DATA_NEEDED: organization (x)] | — |
| Supply Voltage (VDD) | [DATA_NEEDED: VDD voltage] | — |
| 封装 | [DATA_NEEDED: package ball count / FBGA code] | FBGA-496 (BGCU) |
| 安装类型 | Surface Mount (BGA) | Surface Mount |
| 工作温度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| 接口 | LPDDR5X (JEDEC low-power DRAM interface) | LPDDR5X (standard LPDDR ball interface) |
| Prefetch | 16n (LPDDR5/5X architecture) | — |
| Power Efficiency | approx. 20% better than LPDDR5 (per Samsung LPDDR5X family page) | Approx. 25% better than previous LPDDR5 generation (per Samsung) |
| CAS 延迟 | [DATA_NEEDED: CAS latency] | — |
| Refresh | [DATA_NEEDED: refresh scheme] | — |
| RoHS 状态 | unknown | [DATA_NEEDED: RoHS status] |
| Production Status | In production (in stock at distributors) | — |
| MSL 等级 | [DATA_NEEDED: moisture sensitivity level] | [DATA_NEEDED: moisture sensitivity level] |
| 存储容量 | — | 64 Gb (8 GB) |
| Memory Organization | — | x64 |
| Technology | — | LPDDR5X (JEDEC LPDDR5X-class low-power DRAM) |
| Die Configuration | — | Stacked multi-die DRAM |
| Application Segment | — | AI devices and automotive |
| Speed Improvement | — | Up to 1.25x faster than previous generation (per Samsung) |
| Supply Voltage Class | — | [DATA_NEEDED: VDD/VDDQ voltage] |
| Place of Origin (per distributor listing) | — | Johor, Malaysia |