K3KL5L50DM-BGCU vs K3KL3L30CM-BGCU Vergleich

Detaillierter Direktvergleich von K3KL5L50DM-BGCU von Samsung Electronics und K3KL3L30CM-BGCU von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Samsung Electronics
K3KL5L50DM-BGCU K3KL5L50DM-BGCU - LPDDR5X 128Gb 8533Mbps DRAM | Samsung

K3KL5L50DM-BGCU - LPDDR5X 128Gb 8533Mbps DRAM | Samsung

K3KL5L50DM-BGCU ✓ Aktiv
Samsung Electronics
K3KL3L30CM-BGCU K3KL3L30CM-BGCU - 64Gb LPDDR5X DRAM 8533Mbps | Samsung

K3KL3L30CM-BGCU - 64Gb LPDDR5X DRAM 8533Mbps | Samsung

K3KL3L30CM-BGCU ✓ Aktiv

Spezifikationsvergleich

Parameter K3KL5L50DM-BGCU K3KL3L30CM-BGCU
Marke Samsung Electronics Samsung Electronics
Kategorie Memory ICs Memory ICs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,00 $0,00
Speichertyp LPDDR5X SDRAM LPDDR5X SDRAM (Volatile DRAM)
Density 128 Gb (16 GB) —
Datenrate 8533 Mbps per pin 8533 Mbps
Speicherorganisation [DATA_NEEDED: organization (x)] —
Supply Voltage (VDD) [DATA_NEEDED: VDD voltage] —
Gehäuse [DATA_NEEDED: package ball count / FBGA code] FBGA-496 (BGCU)
Montageart Surface Mount (BGA) Surface Mount
Betriebstemperatur [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Schnittstelle LPDDR5X (JEDEC low-power DRAM interface) LPDDR5X (standard LPDDR ball interface)
Prefetch 16n (LPDDR5/5X architecture) —
Power Efficiency approx. 20% better than LPDDR5 (per Samsung LPDDR5X family page) Approx. 25% better than previous LPDDR5 generation (per Samsung)
CAS-Latenz [DATA_NEEDED: CAS latency] —
Refresh [DATA_NEEDED: refresh scheme] —
RoHS-Status unknown [DATA_NEEDED: RoHS status]
Production Status In production (in stock at distributors) —
MSL-Level [DATA_NEEDED: moisture sensitivity level] [DATA_NEEDED: moisture sensitivity level]
Speichergröße — 64 Gb (8 GB)
Memory Organization — x64
Technology — LPDDR5X (JEDEC LPDDR5X-class low-power DRAM)
Die Configuration — Stacked multi-die DRAM
Application Segment — AI devices and automotive
Speed Improvement — Up to 1.25x faster than previous generation (per Samsung)
Supply Voltage Class — [DATA_NEEDED: VDD/VDDQ voltage]
Place of Origin (per distributor listing) — Johor, Malaysia

Datenblätter & Ressourcen

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