K3KL7L70EM-MGCU vs K3KL1L10GM-JGCT 对比
详细并排对比 K3KL7L70EM-MGCU 出自 Samsung Electronics 和 K3KL1L10GM-JGCT 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K3KL7L70EM-MGCU | K3KL1L10GM-JGCT |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | DRAM |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $12.00 | $30.90 |
| 存储器类型 | LPDDR5X SDRAM | LPDDR5X DRAM (SDRAM) |
| Density | 12 Gbit | 32 Gb (4 GB) |
| 存储组织 | x32 | — |
| 封装 | 315-ball FBGA | 441-ball FBGA |
| 安装类型 | Surface Mount (BGA) | Surface Mount (soldered-down BGA) |
| Product Status | Mass Production | — |
| 接口 | LPDDR5X | — |
| Manufacturer | Samsung Semiconductor | — |
| Supply Voltage (Core) | [DATA_NEEDED: core supply voltage] | — |
| 数据速率 | [DATA_NEEDED: data rate in Mbps/pin] | LPDDR5X-7500 (up to 7500 MT/s) |
| 工作温度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Refresh | Self-refresh supported (per LPDDR5X family) | — |
| Power Modes | Deep sleep, self refresh, power down (per LPDDR5X family) | — |
| Fab Location | Johor, Malaysia (listed by distributor) | — |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | unknown |
| Interface Organization | — | x64 |
| Generation | — | LPDDR5X (premium low-power DRAM) |
| Speed vs Previous Generation | — | Up to 1.25x faster than LPDDR5 |
| Power Efficiency vs Previous Generation | — | Approximately 25% better than LPDDR5 |
| Application Class | — | AI edge devices, in-vehicle devices, flagship mobile |
| 电源电压 | — | [DATA_NEEDED: VDD/VDDQ supply voltage] |
| Access Latency | — | [DATA_NEEDED: CAS latency / tRCD / tRP timings] |
| Refresh Rate | — | [DATA_NEEDED: refresh specification] |
| MSL 等级 | — | [DATA_NEEDED: moisture sensitivity level] |