K3KL1L10GM-JGCT - 32Gb LPDDR5X-7500 DRAM | Samsung
料号： K3KL1L10GM-JGCT ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $42.5 | $42.50 |
| 10 | $39.8 | $398.00 |
| 100 | $36.2 | $3,620.00 |
| 500 | $33.5 | $16,750.00 |
| 1,000 | $30.9 | $30,900.00 |
K3KL1L10GM-JGCT 概述
LPDDR (Low Power Double Data Rate) DRAM is a class of synchronous dynamic random-access memory optimized for low operating voltage and high bandwidth per watt, forming the main-memory tier of the memory hierarchy in embedded and mobile systems (DRAM -> low-power DRAM -> LPDDR5X -> LPDDR5X-7500). Compared with conventional DDR4/DDR5, LPDDR5X trades socketed modularity for soldered-down density, deeper power-down states, and per-byte energy efficiency.
Key features include 32Gb single-die density, an LPDDR5X-7500 interface (up to 7500 MT/s) on a x64 organization, and roughly 1.25x higher speed with about 25% better power efficiency than the previous LPDDR5 generation, according to Samsung product literature. Advanced link training and enhanced speed modes enable reliable operation at the highest bin.
Technically, the device uses Samsung leading-edge DRAM process technology with a x64 bus architecture suited to SoC memory controllers from Qualcomm and MediaTek class application processors. The FBGA ball grid array provides short, controlled-impedance traces on the PCB, supporting the multi-gigabit signaling rates; fly-by-free point-to-point topologies are typical.
Typical applications include AI edge accelerators and in-vehicle infotainment/high-performance compute modules, flagship smartphone main memory, and industrial high-speed vision systems where LPDDR5X frequency headroom is required.
Design consideration: LPDDR5X-7500 signal integrity demands strict length-matched routing, reference-plane continuity, and controller-side equalization calibration during boot; verify the SoC memory controller supports the 7500 MT/s bin and JEDEC LPDDR5X training sequences before layout.
This page synthesizes distributor stock data, drop-in same-family alternatives, and practical design notes not found in the Samsung datasheet.
直接替换替代料： K3KL1L10GM-JGCT ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： K3KL1L10GM-JGCT （相同外形与封装尺寸） ——差异在于 Density, Memory Type, Application Class, Mounting Type, Package.
快速对比工具——选择替代料号进行并排对比：
K3KL7L70EM-MGCU
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$12 / 个
查看数据手册 →K3KL3L30CM-BGCT
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
联系询价
查看数据手册 →K3LK4L40DM-BGCT
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$40.5 / 个
查看数据手册 →K3LK8L80CM-MGCT
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
联系询价
查看数据手册 →K3KL1L10GM-JGCT 规格参数
| 存储器类型 | LPDDR5X DRAM (SDRAM) |
| Density | 32 Gb (4 GB) |
| Interface Organization | x64 |
| 数据速率 | LPDDR5X-7500 (up to 7500 MT/s) |
| Generation | LPDDR5X (premium low-power DRAM) |
| Speed vs Previous Generation | Up to 1.25x faster than LPDDR5 |
| Power Efficiency vs Previous Generation | Approximately 25% better than LPDDR5 |
| 封装 | 441-ball FBGA |
| 安装类型 | Surface Mount (soldered-down BGA) |
| Application Class | AI edge devices, in-vehicle devices, flagship mobile |
| RoHS 状态 | unknown |
K3KL1L10GM-JGCT 441-ball fbga 引脚配置指南
K3KL1L10GM-JGCT（441-ball fbga 封装）的引脚配置。 引脚编号、功能和连接图在制造商数据手册中定义。请参阅该手册以了解确切的封装尺寸和焊接指南。
暂无详细引脚数据： K3KL1L10GM-JGCT.
请参阅 数据手册 以查看完整引脚配置。
典型应用
K3KL1L10GM-JGCT 适用于 6 应用s: AI Edge Computing Accelerators, In-Vehicle High-Performance Compute, Flagship Smartphone Main Memory, Industrial High-Speed Vision Systems, Computing Modules and SoMs, Data Logging and Embedded Storage Buffering.
AI Edge Computing Accelerators
The K3KL1L10GM-JGCT fits AI edge modules where neural-network inference is bandwidth-bound: its LPDDR5X-7500 interface moves up to 600 GB/s-class peak traffic on the x64 bus, sustaining transformer and CNN workloads feeding NPUs from Qualcomm or MediaTek class SoCs. Per Samsung, LPDDR5X offers about 1.25x the speed and roughly 25% better power efficiency than LPDDR5, directly extending battery life in fanless edge boxes. The 32Gb density holds large model weights and activation buffers locally. Soldered-down 441-ball FBGA mounting on HDI substrates keeps interconnect length minimal, protecting the 7500 MT/s eye diagram; designers should budget for controller-side link training and equalization at every boot to maintain this bandwidth over temperature.
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In-Vehicle High-Performance Compute
Automotive ADAS domains and cockpit computers aggregate multiple camera, radar, and lidar streams that must be buffered and processed in real time; the K3KL1L10GM-JGCT provides the 32Gb capacity and LPDDR5X-7500 bandwidth these pipelines demand. Samsung positions this premium low-power DRAM explicitly for in-vehicle devices, and its ~25% efficiency improvement over LPDDR5 reduces junction heat in sealed, passively cooled ECUs - a decisive thermal advantage at 15-30 W SoC power levels. The soldered FBGA package resists vibration better than socketed DIMM solutions. Designers must validate the memory controller's automotive LPDDR5X training at extreme temperatures and derate the 7500 MT/s bin where the cabin thermal profile exceeds datasheet limits.
推荐
Flagship Smartphone Main Memory
In flagship smartphones, the K3KL1L10GM-JGCT serves as soldered-down main memory beneath or stacked with the application processor, where its 7500 MT/s rate sustains 5G modem throughput, high-refresh-rate display pipelines, and computational photography bursts. Samsung's LPDDR5X delivers approximately 25% better energy per byte than LPDDR5, which translates directly into screen-on time in battery-constrained handsets. The 32Gb die enables 4 GB-per-package configurations or multi-package stacking for 8-16 GB total memory. Package-on-package and PoP-adjacent layouts require careful DDR channel simulation; device makers should enable dynamic frequency scaling between deep power-down and full 7500 MT/s states to balance performance against standby drain.
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Industrial High-Speed Vision Systems
Machine-vision and inspection systems streaming multiple high-frame-rate image sensors need memory bandwidth well beyond LPDDR5-class parts; industry analysis of Samsung's LPDDR lineup (Kingrole, 2026) specifically selects the 32Gb K3KL1L10GM-JGCT for flagship and industrial high-speed vision thanks to higher frequencies and stronger link training than same-capacity LPDDR5. A x64 bus at 7500 MT/s absorbs sustained multi-hundred-MB/s sensor DMA traffic while leaving headroom for on-the-fly defect-classification inference. LPDDR5X efficiency helps fanless industrial enclosures stay within thermal limits. Use length-matched fly-by-free point-to-point routing on dedicated memory layers, and qualify the full industrial temperature profile before deployment on the factory floor.
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Computing Modules and SoMs
System-on-module vendors embed the K3KL1L10GM-JGCT to give compute modules server-class memory bandwidth in a soldered footprint, targeting network appliances, robotics controllers, and edge gateways. The 32Gb density supports 4 GB per package, and pairable configurations reach 8-16 GB on larger modules. LPDDR5X-7500 keeps memory latency low for virtualized workloads and container runtimes, while the ~25% efficiency gain over LPDDR5 reduces module-level heat spreader requirements. Because LPDDR is soldered, module vendors must lock the memory vendor and bin at design time; the 441-ball-class FBGA layout should reserve keep-outs for alternative Samsung family members (verified ball-for-ball) to hedge against supply disruption across the product's field life.
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Data Logging and Embedded Storage Buffering
Embedded data recorders - flight loggers, network analyzers, industrial historians - use the K3KL1L10GM-JGCT as a high-speed buffering tier between fast acquisition front ends and slower NAND storage. At LPDDR5X-7500 on a x64 bus, the DRAM absorbs burst data at multi-GB/s instantaneous rates, letting a background DMA engine drain to eMMC or UFS without overflow. The 32Gb capacity provides seconds-to-minutes of buffer at typical acquisition rates, and deep power-down states cut standby draw between capture events. Samsung product overviews list embedded logging among the part's target uses. Designers should implement power-fail-safe flushing with capacitor-backed hold-up so buffered data survives unexpected power loss.
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推荐产品汇总
工程参考数据： K3KL1L10GM-JGCT ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | K3KL7L70EM-MGCU | K3KL3L30CM-BGCT | K3LK4L40DM-BGCT | K3LK8L80CM-MGCT |
|---|---|---|---|---|---|
| Package | 441-ball FBGA | 441-ball-class FBGA (LPDDR5X family) | FBGA (LPDDR5X family) | FBGA (LPDDR5X family) | FBGA (LPDDR5X family) |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Memory Generation | LPDDR5X-7500 | LPDDR5X (bin per suffix) | LPDDR5X | LPDDR5X | LPDDR5X |
| Target Applications | AI edge, in-vehicle, flagship mobile | Mobile / edge compute | Mobile / edge compute | Mobile / edge compute | Mobile / edge compute |
| Efficiency vs LPDDR5 | ~25% better (per Samsung) | LPDDR5X-class efficiency | LPDDR5X-class efficiency | LPDDR5X-class efficiency | LPDDR5X-class efficiency |
关键差异点
- Highest speed bin in the LPDDR family （对比 K3KL3L30CM-BGCT)
- 32Gb density on a x64 bus （对比 K3LK4L40DM-BGCT)
- ~25% better energy per byte than LPDDR5 （对比 LPDDR5-class predecessors (e.g., K3LK8L80CM-MGCT generation))
设计说明
LPDDR5X-7500 signaling leaves minimal timing margin. Route every data byte lane as a tightly length-matched group (per-byte skew budgets per the SoC memory-controller layout guide), maintain controlled single-ended impedance over unbroken reference planes, and eliminate all stubs - point-to-point topology is mandatory at 7500 MT/s. Obtain Samsung and controller-vendor IBIS-AMI models and simulate the full channel (package, PCB, via transitions) before tape-out. Expect to enable controller-side training, equalization, and read/write leveling at every boot; failing to budget boot time for link training is a common schedule surprise on first silicon bring-up.
Decouple VDDQ and VDD with a dense array of low-ESR ceramic capacitors placed immediately at the FBGA ball field, using multiple vias to dedicated power planes. Peak transient currents at 7500 MT/s are sharply pulsed at the data-rate period, so PDN impedance must stay flat through hundreds of MHz. Estimated: even at typical LPDDR5X mobile operating points (roughly 1 W-class device power during sustained bandwidth), voltage ripple on VDDQ must be held to a few percent to avoid eye collapse. Sequence power rails per the SoC power-up specification and confirm the PMIC supports LPDDR5X VDDQ voltage rails.
Three recurring pitfalls with soldered-down LPDDR5X: (1) assuming pin compatibility between Samsung package suffixes - ball maps differ between package variants and speed bins, so verify the exact datasheet ballout before qualifying a family alternative such as K3KL3L30CM-BGCT; (2) ignoring density-addressing differences when swapping density - bootloader and controller memory maps must be reconfigured; (3) underestimating sourcing risk - premium 7500 MT/s bins are allocated to large OEM contracts, so dual-source strategy and date-code verification with distributors (e.g., Wolfchip stock listings) are essential before locking a single MPN into a multi-year BOM.
合规信息
Compliance status not explicitly stated in the provided distributor data; request Samsung material declarations and certificates of conformance directly for regulated deployments.
