K3LK4L40DM-BGCT vs MT40A256M16GE-075E:B 对比

详细并排对比 K3LK4L40DM-BGCT 出自 Samsung Electronics 和 MT40A256M16GE-075E:B 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Samsung Electronics
K3LK4L40DM-BGCT K3LK4L40DM-BGCT - Samsung DRAM Memory IC | Samsung Electronics

K3LK4L40DM-BGCT - Samsung DRAM Memory IC | Samsung Electronics

K3LK4L40DM-BGCT ✓ 量产中
Micron Technology
MT40A256M16GE-075E:B MT40A256M16GE-075E:B - 4Gb DDR4 SDRAM 2666 MT/s | Micron

MT40A256M16GE-075E:B - 4Gb DDR4 SDRAM 2666 MT/s | Micron

MT40A256M16GE-075E:B ✓ 量产中

规格对比

参数 K3LK4L40DM-BGCT MT40A256M16GE-075E:B
品牌 Samsung Electronics Micron Technology
分类 DRAM Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $40.50 $3.95
存储器类型 DRAM (SDRAM component) DDR4 SDRAM
Manufacturer Samsung Electronics —
Density [DATA_NEEDED: Density] —
Organization (x-width) [DATA_NEEDED: Organization] —
数据速率 [DATA_NEEDED: Data Rate] 2666 MT/s (DDR4-2666)
Supply Voltage Class [DATA_NEEDED: Supply Voltage] —
CAS 延迟 [DATA_NEEDED: CAS Latency] —
Package Type BGA (per -BGC ordering-code suffix) —
Package Ball Count [DATA_NEEDED: Ball Count] —
安装类型 Surface Mount Surface Mount
工作温度 [DATA_NEEDED: Operating Temperature Range] [DATA_NEEDED: operating temperature range for standard grade]
Refresh Rate [DATA_NEEDED: Refresh Interval] —
RoHS 状态 [DATA_NEEDED: RoHS Status] —
Lead Free [DATA_NEEDED: Lead-Free Status] —
MSL 等级 [DATA_NEEDED: Moisture Sensitivity Level] —
Packaging Tape & Reel (per -T-style suffix convention) [DATA_NEEDED: confirmed packaging] —
存储容量 — 4 Gbit
存储组织 — 256M x 16
Memory Interface — Parallel
Clock Frequency — 1.33 GHz
VDD / VDDQ — 1.2 V +/-60 mV
VPP — 2.5 V, -125 mV/+250 mV
Internal Banks — 16
Refresh — 64 ms / 8192-cycle; 32 ms / 8192-cycle at 95C
I/O Type — 1.2 V pseudo open-drain
VREFDQ — On-die, internal, adjustable generation
Special Features — Temperature controlled refresh (TCR)
封装 — 96-FBGA (9 x 14 mm)
Access Time — [DATA_NEEDED: CAS latency / access time]

数据手册与资源

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