K3LK4L40DM-BGCT vs MT40A256M16GE-075E:B Comparaison
Comparaison détaillée côte à côte de K3LK4L40DM-BGCT par Samsung Electronics et MT40A256M16GE-075E:B par Micron Technology. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Samsung Electronics
K3LK4L40DM-BGCT - Samsung DRAM Memory IC | Samsung Electronics
K3LK4L40DM-BGCT ✓ ActifMicron Technology
MT40A256M16GE-075E:B - 4Gb DDR4 SDRAM 2666 MT/s | Micron
MT40A256M16GE-075E:B ✓ ActifComparaison des spécifications
| Paramètre | K3LK4L40DM-BGCT | MT40A256M16GE-075E:B |
|---|---|---|
| Marque | Samsung Electronics | Micron Technology |
| Catégorie | DRAM | Memory ICs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $40,50 | $3,95 |
| Type de mémoire | DRAM (SDRAM component) | DDR4 SDRAM |
| Manufacturer | Samsung Electronics | — |
| Density | [DATA_NEEDED: Density] | — |
| Organization (x-width) | [DATA_NEEDED: Organization] | — |
| Débit de données | [DATA_NEEDED: Data Rate] | 2666 MT/s (DDR4-2666) |
| Supply Voltage Class | [DATA_NEEDED: Supply Voltage] | — |
| Latence CAS | [DATA_NEEDED: CAS Latency] | — |
| Package Type | BGA (per -BGC ordering-code suffix) | — |
| Package Ball Count | [DATA_NEEDED: Ball Count] | — |
| Type de montage | Surface Mount | Surface Mount |
| Température de fonctionnement | [DATA_NEEDED: Operating Temperature Range] | [DATA_NEEDED: operating temperature range for standard grade] |
| Refresh Rate | [DATA_NEEDED: Refresh Interval] | — |
| Statut RoHS | [DATA_NEEDED: RoHS Status] | — |
| Lead Free | [DATA_NEEDED: Lead-Free Status] | — |
| Niveau MSL | [DATA_NEEDED: Moisture Sensitivity Level] | — |
| Packaging | Tape & Reel (per -T-style suffix convention) [DATA_NEEDED: confirmed packaging] | — |
| Taille de mémoire | — | 4 Gbit |
| Organisation de la mémoire | — | 256M x 16 |
| Memory Interface | — | Parallel |
| Clock Frequency | — | 1.33 GHz |
| VDD / VDDQ | — | 1.2 V +/-60 mV |
| VPP | — | 2.5 V, -125 mV/+250 mV |
| Internal Banks | — | 16 |
| Refresh | — | 64 ms / 8192-cycle; 32 ms / 8192-cycle at 95C |
| I/O Type | — | 1.2 V pseudo open-drain |
| VREFDQ | — | On-die, internal, adjustable generation |
| Special Features | — | Temperature controlled refresh (TCR) |
| Boîtier | — | 96-FBGA (9 x 14 mm) |
| Access Time | — | [DATA_NEEDED: CAS latency / access time] |