K3LKBKB0BM-MGCP vs K3K8K80BM-MGCP 对比
详细并排对比 K3LKBKB0BM-MGCP 出自 Samsung Electronics 和 K3K8K80BM-MGCP 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K3LKBKB0BM-MGCP | K3K8K80BM-MGCP |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $46.62 | $0.00 |
| 存储器类型 | DRAM (LPDDR5 SDRAM) | LPDDR5 SDRAM (DRAM) |
| 存储容量 | 32 Gbit | — |
| 存储组织 | 1G x 32 | 2G x 32 |
| 数据速率 | 6400 Mbps per pin | 6400 Mbps |
| Supply Voltage Rails | 500 mV, 900 mV, 1.05 V, 1.8 V | — |
| 接口 | LPDDR5 x32 | LPDDR5 (CMOS) |
| 封装 | FBGA-315 | FBGA-315 (PBGA315) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | -25C to +85C | -25C to +85C |
| Technology Generation | LPDDR5 (JEDEC LPDDR5 family) | — |
| RoHS 状态 | Compliant | Compliant |
| Density per Package | 4 GB (32 Gbit) | — |
| Refresh | Self-refresh and auto-refresh (LPDDR5 standard) | — |
| Application Segment | Mobile, embedded, industrial computing | — |
| Standby / Deep Sleep | LPDDR5 deep-sleep power states | — |
| MSL 等级 | [DATA_NEEDED: MSL level] | — |
| Access Time / Latency | [DATA_NEEDED: CAS latency] | — |
| Density | — | 64 Gb |
| Supply Voltages | — | 500 mV, 900 mV, 1.05 V, 1.8 V |
| Technology | — | CMOS |
| Memory Category | — | Volatile DRAM |
| Lead Free | — | Yes |
| Application Class | — | Specialized ICs / Memory |
| I/O Width | — | 32-bit |