K4A4G085WD-BCPB vs K4A4G085WF-BITD 对比
详细并排对比 K4A4G085WD-BCPB 出自 Samsung Electronics 和 K4A4G085WF-BITD 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K4A4G085WD-BCPB | K4A4G085WF-BITD |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | DRAM |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.00 | $2.65 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gb | 4 Gbit |
| 存储组织 | 512M x 8 | 512M x 8 |
| Die Generation | D-die | — |
| 电源电压 | 1.2 V | — |
| 接口 | DDR4 (Double Data Rate 4) | Parallel, DDR4 SSTL12 |
| 封装 | FBGA-78 (PB) | 78-ball FBGA (78FBGA) |
| 安装类型 | Surface Mount (BGA) | Surface Mount (BGA) |
| Speed Grade / Data Rate | [DATA_NEEDED: speed grade / data rate] | — |
| CAS 延迟 | [DATA_NEEDED: CAS latency] | CL19 (typical at 2666 Mbps) |
| 工作温度 | [DATA_NEEDED: operating temperature range] | -40C to +95C |
| Refresh | [DATA_NEEDED: refresh specification] | Self-refresh and auto-refresh (8K/64ms per JEDEC DDR4) |
| RoHS 状态 | Compliant (PB lead-free suffix) | — |
| 无卤 | [DATA_NEEDED: halogen-free status] | — |
| Datasheet Pages | 66 pages (K4A4G085WD family datasheet) | — |
| Speed | — | 2666 Mbps (MT/s) |
| Supply Voltage (VDD) | — | 1.2 V |
| VPP Voltage | — | 2.5 V |
| Bank Architecture | — | 8 banks x 4 bank groups |
| Burst Length | — | BL8 |
| Termination | — | ODT / dynamic ODT |
| Data Mask | — | DM supported (x8) |
| Application Grade | — | Industrial |