K4A4G085WD-BCPB vs K4A4G085WF-BITD Comparison
Detailed side-by-side comparison of K4A4G085WD-BCPB by Samsung Electronics and K4A4G085WF-BITD by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4A4G085WD-BCPB | K4A4G085WF-BITD |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | DRAM |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.00 | $2.65 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gb | 4 Gbit |
| Organization | 512M x 8 | 512M x 8 |
| Die Generation | D-die | — |
| Supply Voltage | 1.2 V | — |
| Interface | DDR4 (Double Data Rate 4) | Parallel, DDR4 SSTL12 |
| Package | FBGA-78 (PB) | 78-ball FBGA (78FBGA) |
| Mounting Type | Surface Mount (BGA) | Surface Mount (BGA) |
| Speed Grade / Data Rate | [DATA_NEEDED: speed grade / data rate] | — |
| CAS Latency | [DATA_NEEDED: CAS latency] | CL19 (typical at 2666 Mbps) |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | -40C to +95C |
| Refresh | [DATA_NEEDED: refresh specification] | Self-refresh and auto-refresh (8K/64ms per JEDEC DDR4) |
| RoHS Status | Compliant (PB lead-free suffix) | — |
| Halogen Free | [DATA_NEEDED: halogen-free status] | — |
| Datasheet Pages | 66 pages (K4A4G085WD family datasheet) | — |
| Speed | — | 2666 Mbps (MT/s) |
| Supply Voltage (VDD) | — | 1.2 V |
| VPP Voltage | — | 2.5 V |
| Bank Architecture | — | 8 banks x 4 bank groups |
| Burst Length | — | BL8 |
| Termination | — | ODT / dynamic ODT |
| Data Mask | — | DM supported (x8) |
| Application Grade | — | Industrial |