K4A4G085WF-BITD vs MT40A512M8RH-075E:B 对比
详细并排对比 K4A4G085WF-BITD 出自 Samsung Electronics 和 MT40A512M8RH-075E:B 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K4A4G085WF-BITD | MT40A512M8RH-075E:B |
|---|---|---|
| 品牌 | Samsung Electronics | Micron Technology |
| 分类 | DRAM | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.65 | $2.15 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | 4 Gbit |
| 存储组织 | 512M x 8 | 512M x 8 |
| Speed | 2666 Mbps (MT/s) | — |
| Supply Voltage (VDD) | 1.2 V | — |
| VPP Voltage | 2.5 V | — |
| 工作温度 | -40C to +95C | [DATA_NEEDED: operating temperature range (standard grade)] |
| 封装 | 78-ball FBGA (78FBGA) | 78-FBGA (9 x 10.5 mm), TFBGA |
| Bank Architecture | 8 banks x 4 bank groups | — |
| Burst Length | BL8 | — |
| CAS 延迟 | CL19 (typical at 2666 Mbps) | — |
| 安装类型 | Surface Mount (BGA) | Surface Mount |
| 接口 | Parallel, DDR4 SSTL12 | — |
| Refresh | Self-refresh and auto-refresh (8K/64ms per JEDEC DDR4) | Refresh max interval extension at extended TC temperature range (125C capable per family features) |
| Termination | ODT / dynamic ODT | — |
| Data Mask | DM supported (x8) | — |
| Application Grade | Industrial | — |
| 数据速率 | — | 2666 MT/s (DDR4-2666) |
| Clock Frequency | — | 1333 MHz (1.33 GHz) |
| VDD Supply Voltage | — | 1.2 V +/-60 mV |
| VDDQ Supply Voltage | — | 1.2 V +/-60 mV |
| VPP Supply Voltage | — | 2.5 V, -125 mV/+250 mV |
| 接口类型 | — | Parallel |
| I/O Structure | — | 1.2V pseudo open-drain |
| 基准电压 | — | On-die internal adjustable VREFDQ generation |
| Speed Grade Suffix | — | -075E |
| RoHS 状态 | — | [DATA_NEEDED: RoHS status] |
| Packaging Option Suffix | — | :B (ball map B designation per Mouser listing) |