K4A4G165WD-BCPB vs K4A4G165WE-BCTD 对比
详细并排对比 K4A4G165WD-BCPB 出自 Samsung Electronics 和 K4A4G165WE-BCTD 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K4A4G165WD-BCPB | K4A4G165WE-BCTD |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | DRAM |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $3.10 | $11.38 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM (volatile DRAM) |
| Density | 4 Gbit | — |
| 存储组织 | 256M x 16 | — |
| 数据速率 | 2133 MT/s | — |
| Core Voltage | 1.2 V | — |
| 封装 | FBGA-96 | FBGA-96 (TFBGA) |
| 安装类型 | Surface Mount | Surface Mount |
| Die Generation | D-die | E-die |
| Bank Architecture | 4 bank groups x 4 banks | — |
| CAS 延迟 | [DATA_NEEDED: CAS Latency at 2133 speed bin] | — |
| Burst Length | 8 (BL8, fixed/chop) | BL8 (JEDEC DDR4) |
| 接口 | DDR4 (synchronous, source-synchronous strobe) | Parallel, x16 |
| 工作温度 | [DATA_NEEDED: operating temperature range] | 0C to +85C |
| Pb-Free | Yes (per Samsung part-numbering suffix) | — |
| RoHS 状态 | Compliant (lead-free suffix) | Compliant (per JLCPCB listing) |
| Refresh | Self-refresh supported (TCSR per DDR4 standard features) | — |
| 存储容量 | — | 4 Gbit |
| Memory Organization | — | 256M x 16 |
| Supply Voltage (VDD) | — | 1.2 V (1.14 V to 1.26 V) |
| Terminal Count | — | 96 |
| Speed Grade | — | [DATA_NEEDED: max data rate / CAS latency for -BCTD suffix] |
| Product Status | — | Active |
| Datasheet Revision | — | K4A4G165WE Rev. 1.4, Jun. 2016 |
| Bank Group Architecture | — | Yes (DDR4) |