K4A8G085WC-BIWE vs K4A8G085WB-BIWE 对比
详细并排对比 K4A8G085WC-BIWE 出自 Samsung Electronics 和 K4A8G085WB-BIWE 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K4A8G085WC-BIWE | K4A8G085WB-BIWE |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $6.29 | $6.50 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | — |
| 存储组织 | 1G x 8 | — |
| 数据速率 | 3200 Mbps | 3200 Mbps |
| Supply Voltage (VDD) | 1.2 V | — |
| Supply Voltage (VDDQ) | 1.2 V | — |
| 工作温度范围 | -40°C to +95°C | — |
| 封装 | 78-FBGA | 78-FBGA |
| 安装类型 | Surface Mount | Surface Mount |
| 接口 | POD-12 | — |
| Burst Length | 8 (BL8), 4 (BC4) | — |
| CAS 延迟 | 22 (CL22) | [DATA_NEEDED: CL value] |
| Refresh | Auto-refresh, self-refresh | Auto-refresh, self-refresh |
| RoHS 状态 | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| 存储容量 | — | 8 Gb |
| Memory Organization | — | 1G x 8 |
| 电源电压 | — | 1.2 V |
| 工作温度 | — | 0°C to +85°C |
| Memory Interface | — | Parallel |
| Access Time | — | [DATA_NEEDED: tRCD, tRP, tRAS] |
| 无卤 | — | Yes |