K4A8G165WB-BCTD vs K4A8G085WB-BCRC 对比
详细并排对比 K4A8G165WB-BCTD 出自 Samsung Electronics 和 K4A8G085WB-BCRC 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K4A8G165WB-BCTD | K4A8G085WB-BCRC |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $37.00 | $6.80 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| 存储组织 | 512M x 16 | 1G x 8 |
| Total Density | 8 Gb | — |
| 数据速率 | 2666 Mbps/pin (PC4-2666) | 2400 Mbps |
| 电源电压 | 1.2 V | 1.2 V |
| 封装 | 96-ball FBGA | 78-ball FBGA |
| 工作温度 | 0°C to +95°C (TC) | 0°C to 85°C |
| CAS 延迟 | [DATA_NEEDED: CL value] | — |
| tRCD | [DATA_NEEDED: tRCD value] | — |
| tRP | [DATA_NEEDED: tRP value] | — |
| Refresh | Auto-refresh, self-refresh | — |
| On-Die Termination | Yes (ODT) | Yes |
| ZQ Calibration | Yes | — |
| Data Mask | Yes | — |
| RoHS | Compliant | Compliant |
| Density | — | 8 Gb |
| Number of Terminals | — | 78 |
| Refresh Cycles | — | 8192 |
| Access Time | — | 0.175 ns |
| Technology | — | CMOS |
| Burst Length | — | 8 and 4 |
| Auto-Refresh | — | Yes |
| Self-Refresh | — | Yes |