K4AAG165WM-BCTD vs K4AAG165WM-BCWE 对比
详细并排对比 K4AAG165WM-BCTD 出自 Samsung Electronics 和 K4AAG165WM-BCWE 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K4AAG165WM-BCTD | K4AAG165WM-BCWE |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | DRAM |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $62.00 | $54.65 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gb | 16 Gbit |
| 存储组织 | 1G x 16 | 256M x 16 (1G x 16) |
| Speed | 2666 Mbps | — |
| 电源电压 | 1.2 V (1.14 V to 1.26 V) | — |
| 工作温度 | 0C to +85C | [DATA_NEEDED: temperature range for WM-BCWE] |
| 封装 | 96FBGA (96-ball Fine-Pitch Ball Grid Array) | 78-ball FBGA |
| 接口 | SSTL-12 | Parallel (DDR4) |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| CRC Function | Yes | — |
| ZQ Calibration | Yes | — |
| Dynamic On-Chip Termination | Yes | — |
| Data Mask | Yes | — |
| 安装类型 | Surface Mount (BGA solder reflow) | Surface Mount |
| RoHS 状态 | RoHS (per LCSC listing) | Compliant |
| 数据速率 | — | 3200 Mbps |
| Supply Voltage VDD | — | 1.2 V |
| Supply Voltage VDDQ | — | 1.2 V |
| Access Time (Clock Cycle Time) | — | [DATA_NEEDED: tCK for BCWE bin] |
| CAS 延迟 | — | [DATA_NEEDED: CL at 3200 Mbps] |
| Bank Groups | — | 4 (x16 configuration) |
| Burst Length | — | 8 |
| Die Revision | — | W (WM suffix) |
| Operating Frequency | — | 1600 MHz (DDR, 3200 Mbps) |