K4AAG165WM-BCWE vs K4AAG165WM-BCTD 对比
详细并排对比 K4AAG165WM-BCWE 出自 Samsung Electronics 和 K4AAG165WM-BCTD 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K4AAG165WM-BCWE | K4AAG165WM-BCTD |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | DRAM | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $54.65 | $62.00 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gbit | 16 Gb |
| 存储组织 | 256M x 16 (1G x 16) | 1G x 16 |
| 数据速率 | 3200 Mbps | — |
| 接口 | Parallel (DDR4) | SSTL-12 |
| Supply Voltage VDD | 1.2 V | — |
| Supply Voltage VDDQ | 1.2 V | — |
| Access Time (Clock Cycle Time) | [DATA_NEEDED: tCK for BCWE bin] | — |
| CAS 延迟 | [DATA_NEEDED: CL at 3200 Mbps] | — |
| Bank Groups | 4 (x16 configuration) | — |
| Burst Length | 8 | — |
| 封装 | 78-ball FBGA | 96FBGA (96-ball Fine-Pitch Ball Grid Array) |
| 安装类型 | Surface Mount | Surface Mount (BGA solder reflow) |
| 工作温度 | [DATA_NEEDED: temperature range for WM-BCWE] | 0C to +85C |
| Die Revision | W (WM suffix) | — |
| RoHS 状态 | Compliant | RoHS (per LCSC listing) |
| Operating Frequency | 1600 MHz (DDR, 3200 Mbps) | — |
| Speed | — | 2666 Mbps |
| 电源电压 | — | 1.2 V (1.14 V to 1.26 V) |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| CRC Function | — | Yes |
| ZQ Calibration | — | Yes |
| Dynamic On-Chip Termination | — | Yes |
| Data Mask | — | Yes |