K4B4G1646D-BMK0 vs NT5CB256M16CP-DI 对比
详细并排对比 K4B4G1646D-BMK0 出自 Samsung Electronics 和 NT5CB256M16CP-DI 出自 Nanya Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Samsung Electronics
K4B4G1646D-BMK0 - 4Gb DDR3L SDRAM 256Mx16 1600Mbps | Samsung
K4B4G1646D-BMK0 ✓ 量产中
规格对比
| 参数 | K4B4G1646D-BMK0 | NT5CB256M16CP-DI |
|---|---|---|
| 品牌 | Samsung Electronics | Nanya Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $5.90 | $6.50 |
| Density | 4 Gb | 4 Gb |
| 存储组织 | 256M x 16 | 256M x 16 |
| Speed Grade | 1600 Mbps (PC3L-12800) | — |
| Voltage | 1.35 V | — |
| 工作温度 | -40°C to 95°C | — |
| 封装 | 96FBGA (TFBGA) | TFBGA-96 |
| 存储器类型 | DDR3L SDRAM | DDR3L SDRAM |
| Die Version | D-die | — |
| Lead-Free | Yes | Yes |
| 无卤 | Yes | — |
| RoHS Compliant | Yes | — |
| Number of Terminals | 96 | — |
| Package Code | TFBGA | — |
| Number of Functions | 1 | — |
| 数据速率 | 1600 Mbps | 1600 Mbps/pin (max) |
| 电源电压 | — | 1.35 V (DDR3L) |
| Number of Banks | — | 8 |
| CAS Latency (CL) | — | 5, 6, 7, 8, 9, 10, 11 |
| Write Latency (CWL) | — | 5, 6, 7, 8, 9 |
| Additive Latency | — | 0-13 |
| 工作温度范围 | — | -40°C to +95°C (industrial), -40°C to +105°C (automotive) |
| RoHS | — | Compliant |
| Differential Clock Input | — | Yes (CK, CK#) |
| On-Die Termination (ODT) | — | Yes |