K4B4G1646D-BMK0 vs NT5CB256M16CP-DI Comparison
Detailed side-by-side comparison of K4B4G1646D-BMK0 by Samsung Electronics and NT5CB256M16CP-DI by Nanya Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4B4G1646D-BMK0 - 4Gb DDR3L SDRAM 256Mx16 1600Mbps | Samsung
K4B4G1646D-BMK0 ✓ Active
Specification Comparison
| Parameter | K4B4G1646D-BMK0 | NT5CB256M16CP-DI |
|---|---|---|
| Brand | Samsung Electronics | Nanya Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Density | 4 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 |
| Speed Grade | 1600 Mbps (PC3L-12800) | — |
| Voltage | 1.35 V | — |
| Operating Temperature | -40°C to 95°C | — |
| Package | 96FBGA (TFBGA) | TFBGA-96 |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Die Version | D-die | — |
| Lead-Free | Yes | Yes |
| Halogen Free | Yes | — |
| RoHS Compliant | Yes | — |
| Number of Terminals | 96 | — |
| Package Code | TFBGA | — |
| Number of Functions | 1 | — |
| Data Rate | 1600 Mbps | 1600 Mbps/pin (max) |
| Supply Voltage | — | 1.35 V (DDR3L) |
| Number of Banks | — | 8 |
| CAS Latency (CL) | — | 5, 6, 7, 8, 9, 10, 11 |
| Write Latency (CWL) | — | 5, 6, 7, 8, 9 |
| Additive Latency | — | 0-13 |
| Operating Temperature Range | — | -40°C to +95°C (industrial), -40°C to +105°C (automotive) |
| RoHS | — | Compliant |
| Differential Clock Input | — | Yes (CK, CK#) |
| On-Die Termination (ODT) | — | Yes |