K4B4G1646D-BYK00 vs H5TC4G63AFR-G7A 对比
详细并排对比 K4B4G1646D-BYK00 出自 Samsung Electronics 和 H5TC4G63AFR-G7A 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Samsung Electronics
K4B4G1646D-BYK00 - 4Gb DDR3L SDRAM 256Mx16 96FBGA | Samsung
K4B4G1646D-BYK00 ✓ 量产中规格对比
| 参数 | K4B4G1646D-BYK00 | H5TC4G63AFR-G7A |
|---|---|---|
| 品牌 | Samsung Electronics | SK hynix |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $7.50 | $6.50 |
| 存储器类型 | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gb | 4Gb |
| 存储组织 | 256M x 16 | 256M x 16 |
| 数据速率 | 1600 Mbps | 1600 Mbps (PC3-12800) |
| 电源电压 | 1.35 V (also operates at 1.5 V) | 1.35V |
| 封装 | 96-ball TFBGA | 96-ball FBGA |
| Number of Terminals | 96 | — |
| 工作温度 | 0°C to 85°C | 0°C to 95°C (case) |
| CAS 延迟 | Programmable | Programmable (e.g., 11) |
| Additional Features | Auto precharge, asynchronous reset, ZQ calibration, data mask, dynamic on-chip termination | — |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| 无卤 | Yes | Yes |
| Package Shape | RECTANGULAR | — |
| Temperature Grade | OTHER | — |
| Burst Length | — | 8 and 4 |
| Refresh Period | — | 7.8us at 85°C |
| On-Die Termination | — | Supported |
| Process Technology | — | CMOS |