K4RAH165VB-BCWM vs K4RAH086VB-BCWM 对比
详细并排对比 K4RAH165VB-BCWM 出自 Samsung Electronics 和 K4RAH086VB-BCWM 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Samsung Electronics
K4RAH086VB-BCWM - DDR5 16Gb 5600Mbps SDRAM | Samsung Semiconductor
K4RAH086VB-BCWM ✓ 量产中规格对比
| 参数 | K4RAH165VB-BCWM | K4RAH086VB-BCWM |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | DRAM |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $9.92 | $44.55 |
| 存储器类型 | DDR5 SDRAM (volatile DRAM) | DDR5 SDRAM |
| 存储容量 | 16 Gb | 16 Gb |
| Memory Organization | 1G x 16 | — |
| Memory Interface | Parallel | — |
| 电源电压 | 1.1 V | 1.1 V |
| Technology | DDR5 | DRAM (volatile) |
| 封装 | FBGA-106 | FBGA-82 |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | 0C to +85C | Commercial temperature range (per datasheet) |
| Maximum Data Rate (DDR5 family) | up to 7200 Mbps | — |
| On-die ECC | Yes | — |
| Auto Self-Refresh | Yes | — |
| Asynchronous Reset | Yes | — |
| Write Leveling | Yes | — |
| CRC Function | Yes | — |
| ZQ Calibration | Yes | — |
| RoHS 状态 | Compliant | Compliant |
| Speed Grade (suffix BCWM) | [DATA_NEEDED: speed grade / CAS latency] | — |
| Packaging | Tray | — |
| 存储组织 | — | 2G x 8 |
| 数据速率 | — | 5600 Mbps |
| 接口 | — | DDR5 (parallel) |
| Speed Grade | — | BCWM |
| ECC | — | On-die ECC |
| Burst Length | — | 32 (BL32, DDR5 standard) |
| 生命周期状态 | — | Active |
| Sub-channel Architecture | — | Dual independent 32-bit sub-channels (per DDR5 spec) |