K4RBH086VB-BCQK vs K4RBH165VB-BCQK 对比

详细并排对比 K4RBH086VB-BCQK 出自 Samsung Electronics 和 K4RBH165VB-BCQK 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Samsung Electronics
K4RBH086VB-BCQK K4RBH086VB-BCQK - DDR5 16Gb 4800Mbps DRAM | Samsung

K4RBH086VB-BCQK - DDR5 16Gb 4800Mbps DRAM | Samsung

K4RBH086VB-BCQK ✓ 量产中
Samsung Electronics
K4RBH165VB-BCQK K4RBH165VB-BCQK - DDR5 16Gb 4800Mbps DRAM | Samsung

K4RBH165VB-BCQK - DDR5 16Gb 4800Mbps DRAM | Samsung

K4RBH165VB-BCQK ✓ 量产中

规格对比

参数 K4RBH086VB-BCQK K4RBH165VB-BCQK
品牌 Samsung Electronics Samsung Electronics
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.00 $0.00
存储器类型 DDR5 SDRAM DDR5 SDRAM
Density 16 Gb —
存储组织 2G x 8 1G x 16
数据速率 4800 Mbps 4800 Mbps/pin
Supply Voltage (VDD) 1.1 V —
接口 DDR5 (CA bus, ODECC) —
On-die ECC Yes —
封装 FBGA-82 —
安装类型 Surface Mount Surface Mount
工作温度 [DATA_NEEDED: operating temperature range] 0 C to +85 C
Refresh [DATA_NEEDED: refresh rate 32ms/64ms] —
CAS Latency (CL) [DATA_NEEDED: CAS latency at 4800 Mbps] —
Power Supply Rails VDD/VDDQ 1.1 V (PMIC on module) —
MSL 等级 [DATA_NEEDED: moisture sensitivity level] —
RoHS 状态 Compliant [DATA_NEEDED: RoHS status]
Packaging [DATA_NEEDED: tray or tape and reel standard quantity] —
存储容量 — 16 Gb
Speed Grade — BCQK (4800 Mbps)
Self Refresh — Auto self-refresh
Reset Function — Asynchronous reset
Error Correction — On-chip (on-die) ECC
Write Leveling — Yes
CRC Function — Yes
ZQ Calibration — Yes
电源电压 — [DATA_NEEDED: core supply voltage (VDD), nominally 1.1 V for DDR5]
Package Type — [DATA_NEEDED: exact package code, expected FBGA surface mount]
Burst Length — [DATA_NEEDED: burst length (BL16 per DDR5 standard)]

数据手册与资源

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