K4RBH086VB-BCQK - DDR5 16Gb 4800Mbps DRAM | Samsung
料号： K4RBH086VB-BCQK ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $0 | $0.00 |
| 10 | $0 | $0.00 |
| 100 | $0 | $0.00 |
| 500 | $0 | $0.00 |
| 1,000 | $0 | $0.00 |
K4RBH086VB-BCQK 概述
DDR5 SDRAM (Double Data Rate 5 synchronous dynamic random-access memory) is the fifth generation of JEDEC DDR DRAM. In the memory hierarchy it sits as main-system memory below cache SRAM and above storage NAND, feeding CPUs, GPUs, and AI accelerators in servers, workstations, and high-performance computing platforms. DDR5 doubles bank groups versus DDR4, lowers the operating voltage from 1.2V to 1.1V, and moves power regulation onto the memory module through a PMIC 5000.
Key features of this Samsung 16Gb DDR5 device include the 4800 Mbps data rate (PC5-38400 class performance), x8 organization suited to registered DIMMs and embedded memory down, on-die ECC (ODECC) that corrects internal bit errors without bus overhead, and low 1.1V operation that reduces power per bit transferred. The FBGA-82 ball grid array package provides short interconnects for signal integrity at multi-gigabit rates.
Architecturally, the die is split into two independent 8Gb half-pages with separate DCA/CA buses, allowing a memory controller to address one half while the other refreshes, improving effective bandwidth. DLL-enabled mode operation and programmable RL/WL latencies let designers tune timing to the platform.
Typical applications include cloud and enterprise server RDIMMs, AI accelerator HBM-adjacent host memory, high-performance desktop/workstation UDIMMs, and embedded computing modules requiring dense DRAM.
Design consideration: DDR5 signal integrity demands length-matched fly-by routing of CA/CS and DQ/DQS nets, and the 1.1V rail must be delivered by a compliant PMIC with proper sequencing; do not reuse DDR4 power trees.
This page synthesizes distributor stock data, drop-in Samsung family alternatives, and design guidance not found in the manufacturer datasheet. Pricing is quoted via RFQ as of 2026-09-04.
直接替换替代料： K4RBH086VB-BCQK ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： K4RBH086VB-BCQK （相同外形与封装尺寸） ——差异在于 Data Rate, Package, Interface, Operating Temperature, RoHS Status.
快速对比工具——选择替代料号进行并排对比：
K4RAH086VB-BCQK
✅ 直接替换✓ 有现货
$41.0156 / 个
查看数据手册 →K4RAH086VB-BCWM
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$44.5455 / 个
查看数据手册 →K4RAH086VP-BCWM
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
联系询价
查看数据手册 →K4RAH086VB-BIQK
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$4.25 / 个
查看数据手册 →K4RAH086VE-BCWM
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$7.6 / 个
查看数据手册 →K4RAH165VB-BCQK
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
联系询价
查看数据手册 →K4RBH086VB-BCQK 最大额定值与电气特性
| 存储器类型 | DDR5 SDRAM |
| Density | 16 Gb |
| 存储组织 | 2G x 8 |
| 数据速率 | 4800 Mbps |
| Supply Voltage (VDD) | 1.1 V |
| 接口 | DDR5 (CA bus, ODECC) |
| On-die ECC | Yes |
| 封装 | FBGA-82 |
| 安装类型 | Surface Mount |
| Power Supply Rails | VDD/VDDQ 1.1 V (PMIC on module) |
| RoHS 状态 | Compliant |
K4RBH086VB-BCQK fbga-82 引脚配置指南
K4RBH086VB-BCQK（fbga-82 封装）的引脚配置。 该数字 IC 包含 GPIO、通信接口（UART、SPI、I2C）和电源引脚。请参阅制造商数据手册以了解复用引脚功能和配置选项。对嵌入式系统设计和 PCB 布局至关重要。
暂无详细引脚数据： K4RBH086VB-BCQK.
请参阅 数据手册 以查看完整引脚配置。
典型应用
K4RBH086VB-BCQK 适用于 6 应用s: Enterprise Server RDIMM, AI Accelerator Host Memory, High-Performance Desktop and Workstation UDIMM, Embedded Computing Modules, Networking and Telecom Equipment, Test, Measurement, and Validation Systems.
Enterprise Server RDIMM
The K4RBH086VB-BCQK fits enterprise server RDIMM designs because its x8 organization, on-die ECC, and 4800 Mbps data rate match the JEDEC DDR5 registered-DIMM architecture used by current Xeon and EPYC platforms. On-module PMIC 5000 regulation delivers the 1.1V VDD/VDDQ rails, offloading the host board. The two independent 8Gb half-pages with separate command/address buses let the memory controller keep one half active while the other refreshes, improving effective bandwidth. Designers should verify RCD compatibility and SPD programming for the specific speed bin when populating 16Gb-based 32GB/64GB RDIMMs.
推荐
AI Accelerator Host Memory
AI training and inference cards require dense, bandwidth-efficient host memory, and the K4RBH086VB-BCQK delivers 4800 Mbps per pin with on-die ECC for data integrity during long-running workloads. Its 1.1V operation reduces power per transferred bit by roughly 30% versus DDR4, helping stay within accelerator card thermal budgets. Placed as x8 components on ECC-protected memory boards beside GPU/ASIC accelerators, the die's bank-group architecture sustains the random access patterns typical of embedding lookups and KV caches. Ensure the memory controller's training firmware supports this Samsung speed bin for reliable link initialization.
推荐
High-Performance Desktop and Workstation UDIMM
For workstation UDIMMs, the K4RBH086VB-BCQK provides 16Gb per die, enabling high-capacity modules without doubling component count. DDR5-4800 matches the JEDEC standard bin for mainstream desktop platforms, and on-die ECC improves reliability even on unbuffered modules. The FBGA-82 package keeps interconnects short for signal integrity at multi-gigabit rates. Memory vendors should pair the die with a DDR5 SPD hub and PMIC 5000 and validate CL training across the CPU IMC population, since DDR5 introduces per-module power management and two-subsystem addressing that differ from DDR4 design practice.
推荐
Embedded Computing Modules
Industrial embedded computers, edge gateways, and COM Express modules use soldered-down DDR5 such as the K4RBH086VB-BCQK for vibration immunity and long product lifecycles. The 16Gb density supports memory-hungry edge-inference workloads, while 4800 Mbps operation matches industrial SoC memory-controller limits. Soldering the FBGA-82 die directly removes socket reliability concerns and allows tight length-matched fly-by routing on the carrier PCB. Designers should specify the industrial-temperature suffix variant (such as K4RAH086VB-BIQK) when ambient conditions exceed the commercial range, and qualify reflow profiles per Samsung's MSL guidance.
推荐
Networking and Telecom Equipment
Switches, routers, and 5G baseband cards use 16Gb DDR5 dies like the K4RBH086VB-BCQK for packet buffering, flow tables, and control-plane memory. The 4800 Mbps rate provides the headroom needed to feed network processors at line rate, and on-die ECC protects against soft errors in always-on telecom environments. The 1.1V core reduces power density in convection-cooled chassis. Layout teams must maintain fly-by CA topology and matched DQ/DQS lengths on the line card; using the same Samsung DDR5 family across line-card SKUs simplifies SPD/firmware training tables and second-source qualification.
推荐
Test, Measurement, and Validation Systems
Memory ATE fixtures and signal-integrity benches use K4RBH086VB-BCQK components to characterize DDR5-4800 channels and validate controller training algorithms. The die's DLL-enabled mode operation and published compliance masks for the CA/CS receivers (per Samsung's 16Gb DDR5 specification) make it a reference device for receiver-mask testing. x8 organization supports ECC-injected error-rate studies without a module RCD in the path. Labs should build test boards with reworkable BGA footprints and include provision for probing DQS_vml/DCA signals, since DDR5 training features such as RPMTC and DFE require per-bin characterization data.
推荐
推荐产品汇总
工程参考数据： K4RBH086VB-BCQK ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | K4RAH086VB-BCQK | K4RAH086VB-BCWM | K4RAH165VB-BCQK |
|---|---|---|---|---|
| Package | FBGA-82 | FBGA-82 - same | FBGA-82 - same | FBGA-82 - same (x16 ballout differs) |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Density | 16 Gb | 16 Gb | 16 Gb | 16 Gb |
| Organization | 2G x 8 | 2G x 8 | 2G x 8 | 1G x 16 |
| Supply Voltage | 1.1 V | 1.1 V | 1.1 V | 1.1 V |
| On-die ECC | Yes | Yes | Yes | Yes |
| Temperature Suffix | BC (commercial) | BC (commercial) | BC (commercial) | BC (commercial) |
| Price (qty 1) | RFQ | RFQ | RFQ | RFQ |
关键差异点
- Documented DDR5-4800 bin within Samsung's published 16Gb datasheet （对比 K4RAH086VB-BCWM)
- On-die ECC without bus overhead （对比 DDR4 predecessors (e.g., K4AAG165WM-BCWE))
- Two independent 8Gb half-pages （对比 K4RAH165VB-BCQK (x16 variant))
设计说明
DDR5-4800 fly-by routing is mandatory for CA/CS nets; each die sees staggered command arrival that the controller compensates during training. Keep DQ/DQS length mismatch within the JEDEC DDR5 module spec and reference DQ to a solid VDDQ plane. Per Samsung's 16Gb DDR5 specification, the CA and CS input receivers have defined voltage/timing compliance masks and operate in single-data-rate mode - validate receiver margins with eye scans during bring-up rather than relying on DDR4 design rules.
DDR5 moves regulation onto the module: use a PMIC 5000 to generate the 1.1V VDD/VDDQ rails and manage power-up sequencing per the JEDEC DDR5 specification. Do not reuse DDR4 1.2V power trees. Size the PMIC using Samsung's IDD tables for 4800 Mbps operation rather than estimated currents; soldered-down designs should budget bulk and high-frequency decoupling close to each FBGA-82 die to control rail droop during bank-to-bank bursts.
Verify speed-bin suffix compatibility before substituting family parts: BCQK, BCWM, and BI variants share the FBGA-82 footprint but may differ in CL/timing parameters and temperature range, which affects controller training tables and SPD data. Also note Samsung's datasheet is split between the component specification and a separate Device Operation Datasheet covering common DDR5 features - review both documents before finalizing register settings, and re-run memory training after any die-suffix change in production.
合规信息
Samsung semiconductor products are supplied RoHS-compliant and lead-free per Samsung's environmental policy; formal RoHS/REACH/conflict-minerals certificates should be requested with the RFQ as they are revision-dated documents.
