K4RHE165VB-BCWM vs K4RBH046VM-BCWM 对比

详细并排对比 K4RHE165VB-BCWM 出自 Samsung Electronics 和 K4RBH046VM-BCWM 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Samsung Electronics
K4RHE165VB-BCWM K4RHE165VB-BCWM - 24Gb DDR5 SDRAM 5600Mbps 1.1V | Samsung

K4RHE165VB-BCWM - 24Gb DDR5 SDRAM 5600Mbps 1.1V | Samsung

K4RHE165VB-BCWM ✓ 量产中
Samsung Electronics
K4RBH046VM-BCWM K4RBH046VM-BCWM - 32Gb DDR5 5600Mbps DRAM | Samsung | Server

K4RBH046VM-BCWM - 32Gb DDR5 5600Mbps DRAM | Samsung | Server

K4RBH046VM-BCWM ✓ 量产中

规格对比

参数 K4RHE165VB-BCWM K4RBH046VM-BCWM
品牌 Samsung Electronics Samsung Electronics
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.00 $11.35
存储器类型 DDR5 SDRAM DDR5 SDRAM
Density 24 Gb (3 GB) —
存储组织 1G x 16 —
数据速率 5600 Mbps 5600 Mbps
电源电压 1.1 V 1.1 V
封装 106 FBGA 78-ball FBGA
安装类型 Surface Mount (BGA) Surface Mount
工作温度 0 to 85 C 0 C to 85 C
Product Status Mass Production Sample
接口 DDR5 (parallel, DDR) —
Access Type Synchronous —
Clock Rate (nominal) 2800 MHz (5600 MT/s DDR) —
Ball Count 106 —
RoHS 状态 [DATA_NEEDED: RoHS Status] [DATA_NEEDED: RoHS Status]
MSL 等级 [DATA_NEEDED: MSL Level] —
Standard Pack Quantity [DATA_NEEDED: Standard Pack Quantity] —
存储容量 — 32 Gb
Memory Organization — 2G x 4
Memory Interface — Parallel
Technology — DRAM
Memory Format — Volatile
Packaging — Tray
Manufacturer — Samsung Electronics
Speed Grade — DDR5-5600
Access Time / CL — [DATA_NEEDED: CAS Latency]

数据手册与资源

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