K4RBH046VM-BCWM - 32Gb DDR5 5600Mbps DRAM | Samsung | Server
料号： K4RBH046VM-BCWM ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $14.85 | $14.85 |
| 10 | $13.9 | $139.00 |
| 100 | $12.95 | $1,295.00 |
| 500 | $12.1 | $6,050.00 |
| 1,000 | $11.35 | $11,350.00 |
K4RBH046VM-BCWM 概述
DDR5 SDRAM (Double Data Rate 5 synchronous dynamic random-access memory) is the fifth generation of DDR memory technology and sits at the top of the DRAM hierarchy within the broader volatile memory and semiconductor storage taxonomy. Unlike its DDR4 predecessor, DDR5 moves the power management onto the module via a PMIC, doubles the bank groups, and lowers the operating voltage from 1.2 V to 1.1 V, enabling higher bandwidth with reduced power per bit transferred.
Key features of the K4RBH046VM-BCWM include its 32 Gb density in a x4 organization, a 5600 Mbps pin speed suited for DDR5-5600 platforms, a 1.1 V core supply, and an operating temperature range of 0 to 85 degrees C. The x4 organization is specifically favored in registered server DIMMs where high data integrity is achieved through chipkill-class error correction, since narrow-width parts allow ECC to isolate single-device failures.
Technically, the device implements a synchronous DRAM interface with burst-based transfers synchronized to an external clock reference, per Samsung DDR5 component design. Its electrical and functional behavior is defined by the DDR SDRAM interface specifications and memory array characteristics of the DDR5 generation. According to Samsung product listings, the part is intended for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing.
Typical applications include data center server main memory (registered DIMM populations), networking equipment requiring high-bandwidth buffering, and advanced embedded or industrial computing modules where 32 Gb per device reduces component count on dense boards.
A key design consideration is thermal and signal integrity: at 5600 Mbps the FBGA ball map and PCB fly-by routing must respect DDR5 trace-length matching and on-die termination settings, and the 0 to 85 degrees C range should be derated against module-level airflow conditions.
This page synthesizes distributor stock data, drop-in alternative candidates, and practical design notes not found in the manufacturer datasheet.
直接替换替代料： K4RBH046VM-BCWM ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： K4RBH046VM-BCWM （相同外形与封装尺寸） ——差异在于 Package, Interface, Operating Temperature, Technology, Data Rate.
快速对比工具——选择替代料号进行并排对比：
K4RBH046VM-BCCP
✅ 直接替换✓ 有现货
$9.6 / 个
查看数据手册 →K4RAH086VP-BCWM
✅ 直接替换✓ 有现货
联系询价
查看数据手册 →K4RAH086VB-BCWM
✅ 直接替换✓ 有现货
$44.5455 / 个
查看数据手册 →K4RHE086VB-BCWM
✅ 直接替换✓ 有现货
$7.65 / 个
查看数据手册 →K4RHE165VB-BCWM
✅ 直接替换✓ 有现货
联系询价
查看数据手册 →K4RBH046VM-BCWM 最大额定值与电气特性
| 存储器类型 | DDR5 SDRAM |
| 存储容量 | 32 Gb |
| Memory Organization | 2G x 4 |
| 数据速率 | 5600 Mbps |
| 电源电压 | 1.1 V |
| Memory Interface | Parallel |
| Technology | DRAM |
| Memory Format | Volatile |
| 工作温度 | 0 C to 85 C |
| 封装 | 78-ball FBGA |
| 安装类型 | Surface Mount |
| Packaging | Tray |
| Product Status | Sample |
| Manufacturer | Samsung Electronics |
| Speed Grade | DDR5-5600 |
K4RBH046VM-BCWM 78-ball fbga 引脚配置指南
K4RBH046VM-BCWM（78-ball fbga 封装）的引脚配置。 该数字 IC 包含 GPIO、通信接口（UART、SPI、I2C）和电源引脚。请参阅制造商数据手册以了解复用引脚功能和配置选项。对嵌入式系统设计和 PCB 布局至关重要。
暂无详细引脚数据： K4RBH046VM-BCWM.
请参阅 数据手册 以查看完整引脚配置。
典型应用
K4RBH046VM-BCWM 适用于 6 应用s: Data Center Server Main Memory, Networking and Switch Buffer Memory, Embedded Industrial Controllers, Computing Modules and COM Express Boards, Firmware Boot and Embedded Logging Systems, Data Storage and Replacement Sourcing.
Data Center Server Main Memory
The K4RBH046VM-BCWM fits server main memory because its 32 Gb density, 2G x 4 organization, and 5600 Mbps data rate align directly with DDR5-5600 registered DIMM architectures, where x4 devices enable chipkill-class ECC to tolerate a full device failure. Eighteen x4 components populate a 64-bit plus ECC RDIMM channel, giving module vendors high capacity per load. In use, the DRAM is clock-synchronized to the memory controller through the registered clock driver, with on-die ECC and on-die termination supporting 5600 Mbps signaling. The quantified benefit versus DDR4 x4 parts is roughly 20 percent lower operating voltage (1.1 V versus 1.2 V) and doubled bank groups, reducing power per transferred bit while raising effective bandwidth for virtualized and database workloads.
推荐
Networking and Switch Buffer Memory
Networking platforms use the K4RBH046VM-BCWM as deep-packet buffer and queue memory where its 5600 Mbps burst rate sustains line-rate forwarding. The 2G x 4 narrow organization allows memory controllers to interleave many x4 devices for wide, ECC-protected arrays that tolerate single-device faults, which is essential for carrier-grade uptime. In a typical design, the DDR5 component connects to a switch ASIC or network processor DDR5 PHY with fly-by command/address routing; the 1.1 V rail keeps dynamic power low across the dozens of devices a high-port switch may populate. The concrete advantage is 32 Gb per package, which reduces device count roughly 2x versus 16 Gb DDR5 parts, shrinking board area and shortening trace lengths in dense 12.8T to 25.6T switch line cards.
推荐
Embedded Industrial Controllers
Samsung explicitly lists industrial controllers among the target uses for the K4RBH046VM-BCWM. Industrial PCs, machine-vision controllers, and robotics compute modules need volatile working memory with high bandwidth for sensor fusion and real-time analytics. The 0 to 85 degrees C operating range covers most factory-floor ambient conditions, and the 32 Gb 2G x 4 configuration lets designers build compact soldered-down memory arrays with error protection rather than socketed modules that suffer vibration contact issues. On the board, the DRAM pairs with an industrial x86 or Arm SoC DDR5 interface; the 1.1 V supply simplifies the PMIC tree. The quantified benefit is 4 GB per eight devices, enough for log buffering and vision frame buffers in a footprint under 200 square millimeters of silicon.
推荐
Computing Modules and COM Express Boards
Computer-on-module (COM) vendors use soldered-down K4RBH046VM-BCWM devices to deliver DDR5-5600 memory on COM Express, SMARC, and custom SoM form factors. The x4 organization supports the ECC that embedded and edge servers require, while the 32 Gb density allows 8 GB to 32 GB configurations without the height of SO-DIMM sockets. In practice, eight to sixteen x4 components are routed to a module carrier's DDR5 PHY with matched-length fly-by topology; the 78-ball FBGA's low profile suits conformal-coated industrial environments. Compared with 16 Gb DDR5 alternatives, using 32 Gb devices halves component count for a given capacity, cutting placement cost and improving yield. The 1.1 V rail also eases module-level power budgeting for fanless edge deployments.
推荐
Firmware Boot and Embedded Logging Systems
Samsung's product overview names firmware boot and embedded logging among the K4RBH046VM-BCWM's target workloads. In these systems the DDR5 component acts as high-speed scratch memory during boot decompression, as the working set for a logging engine that ingests telemetry before committing to non-volatile storage, and as run-time memory for embedded Linux or RTOS images loaded from flash. The 5600 Mbps rate matters because log ingestion at multi-gigabit sensor rates requires sustained bandwidth; the 32 Gb capacity holds large ring buffers that smooth bursty writes to slower storage. Designers typically pair the DRAM with SPI NOR or eMMC boot devices and size the DDR5 array at 2 GB to 8 GB. The x4 organization again permits ECC coverage, protecting long-running logging nodes from silent data corruption.
推荐
Data Storage and Replacement Sourcing
The Samsung overview also cites data storage and replacement sourcing as intended contexts for the K4RBH046VM-BCWM. Storage controllers in enterprise SSDs and RAID appliances use DDR5 DRAM as metadata cache and mapping-table memory, where its bandwidth accelerates FTL lookups. For replacement sourcing, the part addresses service organizations maintaining installed bases of DDR5-5600 platforms: with tens of thousands of units reported in distributor stock (44,300 pcs on Octopart as of Aug 31, 2026), the WC suffix can be bought to sustain production of qualified DIMM BOMs. The same-family BCCP suffix offers a second source within Samsung for BOM continuity. In both scenarios the key engineering check is suffix-level speed-grade equivalence against the original module qualification record.
推荐
推荐产品汇总
工程参考数据： K4RBH046VM-BCWM ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | K4RBH046VM-BCCP | K4RAH086VP-BCWM | K4RAH086VB-BCWM | K4RHE086VB-BCWM |
|---|---|---|---|---|---|
| Package | 78-ball FBGA | 78-ball FBGA - same | FBGA (same family) | FBGA (same family) | FBGA (same family) |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Organization | 2G x 4 | 2G x 4 | 2G x 8 | 2G x 8 | 2G x 8 |
| Technology | DDR5 SDRAM | DDR5 SDRAM | DDR5 SDRAM | DDR5 SDRAM | DDR5 SDRAM |
| Supply Voltage | 1.1 V | 1.1 V | 1.1 V | 1.1 V | 1.1 V |
| Drop-in Compatibility | Reference | Pin-to-pin same organization | Not drop-in (x8 org) | Not drop-in (x8 org) | Not drop-in (x8 org) |
关键差异点
- Highest density in the compared set （对比 K4RAH086VP-BCWM)
- True pin-to-pin second source （对比 K4RBH046VM-BCCP)
- x4 organization for chipkill-class ECC （对比 K4RHE165VB-BCWM)
设计说明
At 5600 Mbps, DDR5 routing demands strict fly-by command/address topology with per-byte lane length matching within the window specified by the Samsung DDR5 datasheet. Keep DQ/DQS trace skew tightly matched within each nibble, use on-die termination (ODT) settings from the datasheet's operating condition tables, and simulate eye diagrams at the corner data rates. The 78-ball FBGA's short internal bonds help, but via stubs on thick PCBs must be back-drilled for DDR5-5600 timing margins.
The 1.1 V rail must be generated by a DDR5 PMIC on the module per the JEDEC DDR5 architecture. Budget dynamic current using the DDR5 ICC tables in the Samsung datasheet at 5600 Mbps, and derate for the 0 to 85 degrees C range. Estimated: at high utilization an RDIMM populated with x4 devices can draw tens of watts, so the PMIC efficiency and copper pour directly set module thermal performance.
Do not treat Samsung DDR5 suffixes as interchangeable without checking speed binning: WC and CP suffixes encode different grade data. Another pitfall is assuming x4 and x8 devices share the same ball map - they do not; K4RAH086 (x8) parts cannot be dropped onto a K4RBH046 (x4) land pattern. Finally, verify the 0 to 85 degrees C rating covers your worst-case junction condition with airflow, not just ambient.
合规信息
Compliance data not stated in retrieved listings; confirm on the Samsung Semiconductor product page and environmental datasheet for this exact MPN.
