K6F1616U6A-EF55T vs K6F3216U6M-EF70T 对比
详细并排对比 K6F1616U6A-EF55T 出自 Samsung Electronics 和 K6F3216U6M-EF70T 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Samsung Electronics
K6F1616U6A-EF55T - 16Mbit Async SRAM 55ns 48-TFBGA | Samsung
K6F1616U6A-EF55T ✓ 量产中
规格对比
| 参数 | K6F1616U6A-EF55T | K6F3216U6M-EF70T |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.00 | $6.10 |
| 存储器类型 | SRAM - Asynchronous | SRAM - Asynchronous |
| 存储容量 | 16 Mbit | 32 Mbit |
| 存储组织 | 1M x 16 | 2M x 16 |
| 接口 | Parallel | Parallel |
| Access Time | 55 ns | 55 ns |
| Supply Voltage Range | 2.7 V to 3.3 V | — |
| Technology | Full CMOS Static RAM | Full CMOS Static RAM |
| 封装 | 48-TFBGA (7.5 x 9.5 mm) | 55-TFBGA (7.5 x 12 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| Packaging | Tape & Reel (T suffix) | — |
| Clock Frequency | N/A (asynchronous, no clock required) | — |
| Refresh Requirement | None (static RAM) | None (static memory) |
| 工作温度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: Operating Temperature Range] |
| Standby Current | [DATA_NEEDED: standby current] | — |
| Operating Current | [DATA_NEEDED: operating current] | — |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | NO (per third-party listing) |
| MSL 等级 | [DATA_NEEDED: moisture sensitivity level] | — |
| 电源电压 | — | 3 V |
| Speed Grade | — | -EF70 (55 ns) |
| Standard Pack Qty | — | 2400 |
| Memory Composition | — | Volatile SRAM |