K6F1616U6A-EF55T vs K6F3216U6M-EF70T Comparison

Detailed side-by-side comparison of K6F1616U6A-EF55T by Samsung Electronics and K6F3216U6M-EF70T by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Samsung Electronics
K6F1616U6A-EF55T K6F1616U6A-EF55T - 16Mbit Async SRAM 55ns 48-TFBGA | Samsung

K6F1616U6A-EF55T - 16Mbit Async SRAM 55ns 48-TFBGA | Samsung

K6F1616U6A-EF55T ✓ Active
Samsung Electronics
K6F3216U6M-EF70T K6F3216U6M-EF70T - 32Mbit Async SRAM 2Mx16 | Samsung

K6F3216U6M-EF70T - 32Mbit Async SRAM 2Mx16 | Samsung

K6F3216U6M-EF70T ✓ Active

Specification Comparison

Parameter K6F1616U6A-EF55T K6F3216U6M-EF70T
Brand Samsung Electronics Samsung Electronics
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.00 $6.10
Memory Type SRAM - Asynchronous SRAM - Asynchronous
Memory Size 16 Mbit 32 Mbit
Organization 1M x 16 2M x 16
Interface Parallel Parallel
Access Time 55 ns 55 ns
Supply Voltage Range 2.7 V to 3.3 V —
Technology Full CMOS Static RAM Full CMOS Static RAM
Package 48-TFBGA (7.5 x 9.5 mm) 55-TFBGA (7.5 x 12 mm)
Mounting Type Surface Mount Surface Mount
Packaging Tape & Reel (T suffix) —
Clock Frequency N/A (asynchronous, no clock required) —
Refresh Requirement None (static RAM) None (static memory)
Operating Temperature [DATA_NEEDED: operating temperature range] [DATA_NEEDED: Operating Temperature Range]
Standby Current [DATA_NEEDED: standby current] —
Operating Current [DATA_NEEDED: operating current] —
RoHS Status [DATA_NEEDED: RoHS status] NO (per third-party listing)
MSL Level [DATA_NEEDED: moisture sensitivity level] —
Supply Voltage — 3 V
Speed Grade — -EF70 (55 ns)
Standard Pack Qty — 2400
Memory Composition — Volatile SRAM

Datasheets & Resources

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