K6X0808C1D-GF70T00 vs K6X0808C1D-BF55 对比

详细并排对比 K6X0808C1D-GF70T00 出自 Samsung Electro-Mechanics 和 K6X0808C1D-BF55 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Samsung Electro-Mechanics
K6X0808C1D-GF70T00 K6X0808C1D-GF70T00 - 256Kbit 32Kx8 Async SRAM 70ns | Samsung

K6X0808C1D-GF70T00 - 256Kbit 32Kx8 Async SRAM 70ns | Samsung

K6X0808C1D-GF70T00 ✓ 量产中
Samsung Electronics
K6X0808C1D-BF55 K6X0808C1D-BF55 - 256Kbit 5V Asynchronous SRAM 55ns | Samsung

K6X0808C1D-BF55 - 256Kbit 5V Asynchronous SRAM 55ns | Samsung

K6X0808C1D-BF55 ✓ 量产中

规格对比

参数 K6X0808C1D-GF70T00 K6X0808C1D-BF55
品牌 Samsung Electro-Mechanics Samsung Electronics
分类 DRAM DRAM
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.85 $1.85
存储器类型 SRAM - Asynchronous Asynchronous SRAM
存储容量 256 Kbit 256 Kbit
存储组织 32K x 8 32K x 8
Access Time 70 ns 55 ns
接口 Parallel Parallel
Technology CMOS CMOS
电源电压 5 V 5 V
安装类型 Surface Mount Surface Mount
封装 28-SOP 28-SOP
工作温度 [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Standby Current [DATA_NEEDED: standby current] [DATA_NEEDED: standby current]
Active Current [DATA_NEEDED: active current] —
I/O Type Common Data I/O, TTL compatible —
Control Signals CE, OE, WE CE, OE, WE
Clock / Refresh Fully static, no clock or refresh required —
RoHS 状态 [DATA_NEEDED: RoHS status] unknown
Packaging Tape & Reel (T00 suffix) —
Operating Current — [DATA_NEEDED: operating current]
Memory Format — SRAM
Clock Frequency — N/A (asynchronous)
Refresh — Not required (static memory)

数据手册与资源

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