K9PRGY8S7M - Samsung NAND Flash Memory IC | Samsung Electronics
料号： K9PRGY8S7M ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $0 | $0.00 |
| 10 | $0 | $0.00 |
| 100 | $0 | $0.00 |
| 500 | $0 | $0.00 |
| 1,000 | $0 | $0.00 |
K9PRGY8S7M 概述
NAND flash is a type of non-volatile storage technology that retains data without power. Within the memory hierarchy, NAND flash sits below DRAM in speed but offers far higher density and lower cost per bit, making it the backbone of SSDs, eMMC modules, USB drives, memory cards, and embedded storage. NAND cells are arranged in series, which reduces die area and enables the multi-gigabit capacities required by modern consumer, industrial, and automotive systems. Samsung is one of the world's leading NAND producers, with its 3D V-NAND technology stacking cells vertically to increase density further.
Key characteristics of the K9-series include page-based program and block-based erase operations, asynchronous or toggled-mode interfaces, and internal ECC support on newer generations. Exact density, organization, page size, block size, and interface speed for this specific ordering code are not published in the retrieved web data and must be confirmed from the official Samsung datasheet.
Typical applications for this class of device include embedded storage in set-top boxes, smart TVs, industrial controllers, networking equipment, and solid-state drive assemblies where a raw NAND device is managed by a host controller or firmware layer such as FTL (Flash Translation Layer).
Design teams should confirm the exact package outline, ball map, supply voltage, and timing parameters against the Samsung datasheet before layout, since K9-series ordering codes encode density, configuration, and speed grade variations. Note that one distributor listing (OMO Electronic) attributes the MPN to BURNDY, which appears to be an indexing error given the K9 prefix and multiple corroborating NAND FLASH listings for Samsung.
This page synthesizes open-market sourcing data, lifecycle status, and alternative-part guidance not consolidated on any single distributor page.
直接替换替代料： K9PRGY8S7M ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： K9PRGY8S7M （相同外形与封装尺寸） ——差异在于 Mounting Type, Memory Type, Package Type, RoHS Status, NAND Technology.
快速对比工具——选择替代料号进行并排对比：
K9PRGY8S7M-CCK0
✅ 直接替换✓ 有现货
联系询价
查看数据手册 →K9DMGY8J5B-CCK0
✅ 直接替换📋 参考替代料（不在目录中）
K9PRGY8S7M 最大额定值与电气特性
| 存储器类型 | NAND Flash |
| Manufacturer | Samsung Electronics |
| Package Type | BGA (surface mount) |
| 安装类型 | Surface Mount |
K9PRGY8S7M bga (surface mount) 引脚配置指南
K9PRGY8S7M（bga (surface mount) 封装）的引脚配置。 该数字 IC 包含 GPIO、通信接口（UART、SPI、I2C）和电源引脚。请参阅制造商数据手册以了解复用引脚功能和配置选项。对嵌入式系统设计和 PCB 布局至关重要。
暂无详细引脚数据： K9PRGY8S7M.
请参阅 数据手册 以查看完整引脚配置。
典型应用
K9PRGY8S7M 适用于 6 应用s: Solid-State Drive Storage, Embedded System Storage, Consumer Electronics Firmware Storage, Networking and Communication Equipment, Automotive Infotainment Data Storage, Industrial Data Loggers.
Solid-State Drive Storage
The K9PRGY8S7M fits SSD data-storage arrays where a dedicated controller, such as Samsung's MEX (S4LN045X01) controller used in the Samsung 850 PRO SSD family, manages multiple NAND packages through a flash translation layer. In this role the NAND provides the non-volatile media while the controller handles ECC, wear leveling, and garbage collection. Performance depends on parallel channel configuration; connecting multiple K9-series packages across independent channels multiplies bandwidth and hides program/erase latencies. Designers should verify density, page size, and toggle-mode timing from the Samsung datasheet to configure controller timing registers correctly, and should budget spare blocks for wear-leveling overhead over the drive's rated endurance.
推荐
Embedded System Storage
In set-top boxes, smart TVs, industrial controllers, and networking equipment, the K9PRGY8S7M serves as bulk non-volatile storage for firmware images, application data, and logs. Raw K9-series NAND is appropriate when the host SoC includes a NAND flash controller with hardware ECC, allowing the BOM to avoid the cost premium of managed eMMC. The trade-off is firmware responsibility: the design team must implement bad-block management and wear leveling. Use the BGA footprint for space-constrained boards, and reserve spare blocks per the datasheet specification since block retirement accumulates over product lifetime in always-on devices with frequent logging writes.
推荐
Consumer Electronics Firmware Storage
Consumer devices such as audio equipment, appliances, and toys require moderate-capacity non-volatile storage for code and user settings. The K9PRGY8S7M in a compact BGA surface-mount package supports automated assembly on high-volume lines. Because raw NAND density per package is high, one device often covers total firmware plus data needs, simplifying the BOM. Designers should implement a boot-block protection scheme so the primary firmware region is not erased by errant writes, and should validate cold-temperature boot timing since NAND read latency tolerances must remain within controller timing windows across the rated operating range.
推荐
Networking and Communication Equipment
Routers, switches, and baseband cards use K9-series NAND to store OS images, configuration files, and traffic logs. The K9PRGY8S7M provides the raw media while the system's CPU companion controller executes the FTL. High write-frequency logging workloads make wear leveling quality a reliability differentiator; industrial networking equipment should derate endurance generously and monitor block wear via SMART-style telemetry. When dual-bank firmware update schemes are used, capacity planning must account for storing two complete images simultaneously. Confirm supply voltage and interface timing from the Samsung datasheet to match the SoC's memory controller configuration before tape-out.
推荐
Automotive Infotainment Data Storage
Automotive infotainment head units and telematics boxes store navigation maps, media, and diagnostic logs on NAND flash. While the K9PRGY8S7M itself is not AEC-Q100 qualified per the available data, K9-series devices are used in consumer-grade automotive tiers where a dedicated controller with strong ECC handles the harsh electrical environment. For safety-relevant designs, prefer Samsung automotive-qualified storage such as the K4R-series automotive DRAM family for working memory paired with an eMMC. Wide supply-voltage transients, extended temperature derating, and power-fail integrity (write-atomic FTL journaling) are the key engineering considerations in this deployment.
推荐
Industrial Data Loggers
Industrial data loggers and SCADA edge nodes write sensor records continuously for years, making NAND endurance and power-fail robustness the dominant design factors. The K9PRGY8S7M provides dense raw storage; the controller must journal writes so a brownout never corrupts committed records, and must balance wear across blocks to reach the system lifetime target. Estimated: if the application writes 100 MB per day and the device endurance supports the datasheet P/E cycle count, capacity planning should include 2x over-provisioning for wear leveling. Verify the exact P/E cycle rating and page program time from the official Samsung datasheet before finalizing the endurance budget.
推荐
推荐产品汇总
工程参考数据： K9PRGY8S7M ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | K9PRGY8S7M-CCK0 | K9DMGY8J5B-CCK0 |
|---|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Package | BGA (surface mount) | BGA - same footprint family | BGA - verify ball map |
| Memory Type | NAND Flash | NAND Flash | NAND Flash |
| Speed Grade Suffix | Base ordering code | -CCK0 | -CCK0 |
| Lifecycle Status | Active | Active (broker listings) | Active (broker listings) |
关键差异点
- Samsung-origin K9-series NAND die （对比 K9DMGY8J5B-CCK0)
- Raw NAND cost efficiency （对比 K3LKJKJ0CM-MUCP (eMMC))
- BGA surface-mount format （对比 TSOP-packaged legacy K9 NAND)
设计说明
One open-market listing (OMO Electronic) attributes K9PRGY8S7M to BURNDY, but this contradicts the K9 Samsung naming convention and multiple corroborating NAND FLASH listings from IC2IC and Alibaba naming Samsung. When sourcing from brokers, insist on Samsung-original marking, date codes, and, where possible, supplierqualification samples. Counterfeit or remarked NAND is a well-known risk in open-market memory procurement, and a misidentified density can cause hard failures at FTL initialization.
BGA-packaged NAND requires careful escape routing: plan ball-out fan-out before finalizing the footprint, use via-in-pad or dog-bone escapes consistent with your fab's capability, and verify the exact ball map from the official Samsung datasheet rather than assuming a generic BGA pattern. Keep the solder mask-defined pad geometry per JEDEC-style BGA land patterns specified by Samsung, and control reflow profile to avoid solder bridging on fine-pitch ball rows. Confirm ball count and package dimensions from the datasheet before library creation.
Decouple the NAND supply rails with at least 100 nF ceramic capacitor per supply ball pair plus one bulk capacitor per device, placed close to the BGA. Because this raw NAND shares a supply domain with the host controller in most designs, ensure power-fail detection circuitry can gate write enable in time to prevent torn page writes; a supervisory circuit with early-warning threshold gives the FTL time to complete or abort the current program operation cleanly.
合规信息
Compliance status not stated in retrieved web data. Samsung memory products are typically RoHS compliant, but this must be confirmed from the official product page or datasheet.
