K9F2808UOC-PCB0 vs K9F1G08U0B-PCB0 对比
详细并排对比 K9F2808UOC-PCB0 出自 Samsung Electronics 和 K9F1G08U0B-PCB0 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Samsung Electronics
K9F1G08U0B-PCB0 - 1Gbit SLC NAND Flash 3.3V 48-TSOP | Samsung
K9F1G08U0B-PCB0 ✓ 量产中规格对比
| 参数 | K9F2808UOC-PCB0 | K9F1G08U0B-PCB0 |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 不推荐新设计 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.68 | $2.70 |
| 存储器类型 | NAND Flash (SLC, Small-Page) | SLC NAND Flash (Non-Volatile) |
| Memory Density | 128 Mbit (16M x 8) | — |
| 存储组织 | 16M x 8 bit | — |
| Operating Voltage (VCC) | 2.7 V to 3.6 V | — |
| Read Access Time | 50 ns | — |
| Page Size | 528 bytes (512 main + 16 spare) | 2 Kbyte + 64 byte spare |
| Block Size | 16 pages (16 KiB + 256 spare bytes) | 128 Kbyte + 4 Kbyte spare |
| Package Options | 48-TSOP I, 48-WSOP1, 63-TBGA | — |
| I/O Bus Width | x8 | — |
| 工作温度 | Commercial / Industrial (C, I grade) | 0C to +70C (commercial grade) |
| Command Set | Standard NAND (00h/01h/10h/30h/60h/D0h/50h) | — |
| Status Output | R/B# open-drain ready/busy | — |
| Technology Node | Samsung 2nd-generation SLC NAND | — |
| Cell Type | Single-Level Cell (SLC) | — |
| Programming Model | Page program, block erase | — |
| Lead-Free / RoHS | [DATA_NEEDED: RoHS status from Samsung datasheet] | — |
| Density | — | 1 Gbit (128 M x 8 bit) + 32 Mbit spare |
| Supply Voltage (VCC) | — | 2.7 V to 3.6 V (3.3 V typical) |
| 接口 | — | 8-bit parallel (multiplexed address/data/command) |
| Page Program Time (typ) | — | 300 us (max 700 us) |
| Block Erase Time (typ) | — | 2 ms (max 3 ms) |
| Endurance | — | 100 K program/erase cycles per block |
| Data Retention | — | 10 years |
| 封装 | — | 48-pin TSOP-I (Type I), 0.5 mm pitch |
| 安装类型 | — | Surface Mount |
| Package Material | — | Molded plastic (high-quality thermal grade) |
| Access Time | — | 25 us (max) |
| RoHS 状态 | — | Compliant |
| Lead-Free | — | Yes |