K9KUGY8J7C-CCK0 vs K9IUGY8J7B-CCK0 对比

详细并排对比 K9KUGY8J7C-CCK0 出自 Samsung Electronics 和 K9IUGY8J7B-CCK0 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Samsung Electronics
K9KUGY8J7C-CCK0 K9KUGY8J7C-CCK0 - Samsung V-NAND TLC Flash | Samsung Electronics

K9KUGY8J7C-CCK0 - Samsung V-NAND TLC Flash | Samsung Electronics

K9KUGY8J7C-CCK0 ✓ 量产中
Samsung Electronics
K9IUGY8J7B-CCK0 K9IUGY8J7B-CCK0 - 1Tb 3D V-NAND TLC Flash | Samsung

K9IUGY8J7B-CCK0 - 1Tb 3D V-NAND TLC Flash | Samsung

K9IUGY8J7B-CCK0 ✓ 量产中

规格对比

参数 K9KUGY8J7C-CCK0 K9IUGY8J7B-CCK0
品牌 Samsung Electronics Samsung Electronics
分类 Memory ICs EEPROM
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.00 $1.00
Manufacturer Samsung Electronics Samsung Electronics
Product Family K9-Series V-NAND —
存储器类型 NAND Flash NAND Flash, 3D V-NAND TLC
Cell Type TLC (Triple-Level Cell) TLC (3 bits per cell)
Technology Samsung V-NAND (3D NAND) —
Density [DATA_NEEDED: total device density] —
存储组织 [DATA_NEEDED: page/block/plane organization] —
接口 [DATA_NEEDED: asynchronous/synchronous toggle interface mode] —
电源电压 [DATA_NEEDED: VCC supply voltage range] —
Page Size [DATA_NEEDED: page size] [DATA_NEEDED: page size]
Program/Erase Cycles [DATA_NEEDED: endurance rating] [DATA_NEEDED: P/E cycle endurance]
Package Type BGA [DATA_NEEDED: exact package code]
工作温度 Commercial grade (per -CCK0 suffix); exact range [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
安装类型 Surface Mount Surface Mount (BGA)
RoHS 状态 Lead free / RoHS (per Samsung K9-family product pages) [DATA_NEEDED: RoHS status]
MSL 等级 [DATA_NEEDED: moisture sensitivity level] —
Memory Density — 1 Tb (Tera bit)
V-NAND Generation — V6 (6th generation)
Process Node / Layer Count — 4448-128L (128-layer)
接口类型 — [DATA_NEEDED: bus interface type]
Supply Voltage (VCC) — [DATA_NEEDED: VCC voltage]
Supply Voltage (VCCQ) — [DATA_NEEDED: VCCQ voltage]
数据总线宽度 — [DATA_NEEDED: data bus width]
Block Size — [DATA_NEEDED: block size]

数据手册与资源

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