K9KUGY8J7C-BCK0 - 1Tb TLC NAND Flash Memory | Samsung Electronics
料号： K9KUGY8J7C-BCK0 ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $12.5 | $12.50 |
| 10 | $11.6 | $116.00 |
| 100 | $10.9 | $1,090.00 |
| 500 | $10.2 | $5,100.00 |
| 1,000 | $9.55 | $9,550.00 |
K9KUGY8J7C-BCK0 概述
NAND flash is a non-volatile memory technology that retains data without power and sits within the memory hierarchy as a mass-storage medium: memory IC > non-volatile memory > flash memory > NAND flash > V-NAND. TLC NAND stores three bits per memory cell, tripling bit density over MLC at the cost of higher program/erase complexity, which is managed by the host SSD controller through ECC, wear leveling, and program sequencing.
Samsung's V-NAND stacks memory cells vertically rather than shrinking lateral dimensions, improving density and endurance consistency. Key characteristics of this class include 1Tb raw capacity per die, toggle DDR interface for high-bandwidth page reads and writes, and multi-die interleave support that allows multiple stacked dies on a single package substrate for SSD controller parallelism. The -BCK0 suffix denotes Samsung's speed/temperature grade and packaging option code, which must be confirmed against the official datasheet.
Typical applications include enterprise SSDs, client SSDs, embedded storage modules, and data-center storage appliances where high bit density per package reduces board area and controller channel count.
When designing with high-density TLC NAND, ensure the controller supports the device's ONFI/toggle timing mode, implements strong ECC (LDPC), and respects program-suspend/resume behavior. Verify the exact package outline, ball map, and grading suffix against the Samsung datasheet before layout.
This page synthesizes verified sourcing context, drop-in alternatives within Samsung's NAND family, application guidance, and design notes not consolidated on the manufacturer's product page.
直接替换替代料： K9KUGY8J7C-BCK0 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： K9KUGY8J7C-BCK0 （相同外形与封装尺寸） ——差异在于 Memory Type, Cell Type, Product Family, Technology, RoHS Status.
快速对比工具——选择替代料号进行并排对比：
K9JUGY8J5C-BCK0
✅ 直接替换✓ 有现货
联系询价
查看数据手册 →K9JUGY8J5C-CCK0
✅ 直接替换✓ 有现货
$7.6 / 个
查看数据手册 →K9IUGY8J7B-BCK0
✅ 直接替换✓ 有现货
联系询价
查看数据手册 →K9IUGY8J7B-CCK0
✅ 直接替换✓ 有现货
$1 / 个
查看数据手册 →K9HUGY8J5B-BCK0
✅ 直接替换✓ 有现货
联系询价
查看数据手册 →K9HUGY8J5B-CCK0
✅ 直接替换✓ 有现货
$9.6 / 个
查看数据手册 →K9KUGY8J7C-BCK0 最大额定值与电气特性
| 存储器类型 | NAND Flash (TLC V-NAND) |
| Density | 1 Tb |
| Cell Type | TLC (3 bits/cell) |
| Package Type | BGA |
| 安装类型 | Surface Mount |
| RoHS 状态 | Compliant |
| Grade Suffix | BCK0 |
| Manufacturer | Samsung Electronics |
K9KUGY8J7C-BCK0 bga 引脚配置指南
K9KUGY8J7C-BCK0（bga 封装）的引脚配置。 该数字 IC 包含 GPIO、通信接口（UART、SPI、I2C）和电源引脚。请参阅制造商数据手册以了解复用引脚功能和配置选项。对嵌入式系统设计和 PCB 布局至关重要。
暂无详细引脚数据： K9KUGY8J7C-BCK0.
请参阅 数据手册 以查看完整引脚配置。
典型应用
K9KUGY8J7C-BCK0 适用于 6 应用s: Enterprise SSD, Client SSD, Data Center Storage Appliances, Embedded Storage Modules, Surveillance and Video Storage, Automotive and Industrial Data Loggers.
Enterprise SSD
Enterprise solid-state drives consume 8-16 NAND packages per drive, and the K9KUGY8J7C-BCK0's 1Tb TLC density lets a 15.36TB-class drive be built with fewer packages, shorter trace runs, and lower controller channel loading. In this role the device streams page data over its toggle-class DDR interface while the SSD controller applies LDPC ECC and interleaves channels to reach PCIe Gen4/Gen5 bandwidth targets. Because TLC program times are longer than SLC, controllers rely on SLC-cache tiering; the high density of this die maximizes cacheable raw capacity. Verify the datasheet timing mode ceiling and power-fail characteristics when qualifying the drive.
推荐
Client SSD
Client PC SSDs benefit directly from the K9KUGY8J7C-BCK0's cost-per-GB advantage: TLC V-NAND stores three bits per cell, and 1Tb per die means a 2TB drive needs only a fraction of the packages required a generation ago, shrinking the PCB and BOM cost. The device's standard Samsung NAND command set works with mainstream client controllers, and the -BCK0 grade targets standard operating conditions. Design consideration: consumer workloads are read-dominated, which suits TLC endurance, but ensure the controller firmware implements background garbage collection so sustained write performance remains stable after the drive fills.
推荐
Data Center Storage Appliances
Scale-out storage nodes and all-flash arrays deploy hundreds of TB per chassis, so raw NAND density and supply consistency dominate selection. The K9KUGY8J7C-BCK0 offers a single-vendor Samsung supply path and generation-stable footprints across K9H/K9I/K9J/K9K generations, letting one PCB carry multiple NAND generations for cost optimization. Its 1Tb TLC die improves capacity per U.2/E1.S module while keeping power per TB low, a key metric in data-center TCO models. Qualify endurance at the appliance level by logging SMART media-wear indicators across the fleet during pilot deployment.
推荐
Embedded Storage Modules
Embedded modules such as M.2 B-key and soldered-down eMMC/UFS-class assemblies use raw NAND like the K9KUGY8J7C-BCK0 behind an SoC's flash controller in routers, set-top boxes, and industrial gateways. The device's BGA package supports standard SMT reflow, and its vertical V-NAND stacking minimizes board area in height-constrained enclosures. Integration requires the host to implement the Samsung NAND command protocol, bad-block management, and ECC; once firmware supports the generation, footprint compatibility with K9J/K9I family parts simplifies sourcing. Reserve test pads for NAND ID reads to verify grading at production test.
推荐
Surveillance and Video Storage
Video-surveillance NVRs and edge recorders write continuously 24/7, making endurance management the central design task. The K9KUGY8J7C-BCK0's TLC V-NAND provides the density to retain weeks of multi-camera footage at a reasonable cost per TB, while the host controller's wear leveling spreads the roughly constant write stream evenly across the die's blocks. Because TLC P/E endurance is lower than MLC, size the retention buffer conservatively and enable data-refresh for long-idle periods. The -BCK0 grade's standard temperature range suits indoor rack environments; derate for unventilated outdoor enclosures.
推荐
Automotive and Industrial Data Loggers
High-capacity data loggers for fleets, test vehicles, and industrial equipment record sensor streams to multi-terabyte local storage. A bank of K9KUGY8J7C-BCK0 packages behind a fault-tolerant controller provides 1Tb-per-die density with power-loss protection handled at the board level via bulk capacitors and write-completion journaling in firmware. Note that the -BCK0 grade must be checked against the required ambient range; extended-temperature applications may need Samsung automotive-suffix NAND instead. The common Samsung footprint across generations lets one logger PCB scale capacity by populating fewer packages in cost-down variants.
推荐
推荐产品汇总
工程参考数据： K9KUGY8J7C-BCK0 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | K9JUGY8J5C-BCK0 | K9IUGY8J7B-BCK0 | K9HUGY8J5B-BCK0 |
|---|---|---|---|---|
| Package | BGA | BGA - same footprint family | BGA - same footprint family | BGA - same footprint family |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Memory Type | TLC V-NAND Flash | TLC V-NAND Flash | TLC V-NAND Flash | TLC V-NAND Flash |
| Cell Type | TLC (3 bits/cell) | TLC (3 bits/cell) | TLC (3 bits/cell) | TLC (3 bits/cell) |
| Grade Suffix | BCK0 | BCK0 | BCK0 | BCK0 |
| Generation | K-generation (newest in family set) | J-generation (one back) | I-generation (two back) | H-generation (three back) |
关键差异点
- Newest generation density per die （对比 K9IUGY8J7B-BCK0)
- Same footprint across generations enables PCB reuse （对比 K9JUGY8J5C-BCK0)
- Single-vendor supply chain （对比 Micron/SK Hynix 1Tb TLC NAND)
设计说明
Raw NAND toggle DDR interfaces run with source-synchronous clocking; match trace lengths within the controller datasheet's skew budget across DQ0-DQ7, DQS, and clock nets. Keep NAND traces on inner layers with solid reference planes, and limit stubs by placing the K9KUGY8J7C-BCK0 within 50-80 mm of the SSD controller. Series damping resistors on DQS/CLK as recommended by the controller vendor suppress ringing at high timing modes.
Provide separate, low-impedance supplies for VCC and VCCQ with local 100 nF ceramic decoupling per package plus bulk 10 uF per rail shared per channel. Program currents on TLC NAND create supply droop transients that can corrupt in-flight operations if shared rails are undersized; a dedicated bulk capacitor bank per 4-die channel is prudent. Confirm exact rail voltages from the official datasheet before finalizing the power tree - do not assume values from a different generation.
The most common integration failure is firmware/die mismatch: SSD controllers must recognize the exact NAND ID and its read-retry, ECC (LDPC), and bad-block table format for the K-generation. Swapping generations (e.g., K9I to K9K) on the same footprint without firmware updates will fail initialization. Also verify power-fail behavior: TLC program interruption without power-fail protection can leave pages indeterminate, so implement hardware write-protect assertion on brown-out.
合规信息
RoHS compliance stated from general modern Samsung memory manufacturing practice; per-data compliance documents should be requested from Samsung for formal qualification.
