K9PRGY8S7M-CCK0 vs K9ADGD8S0A 对比
详细并排对比 K9PRGY8S7M-CCK0 出自 Samsung Electronics 和 K9ADGD8S0A 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K9PRGY8S7M-CCK0 | K9ADGD8S0A |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | EEPROM | EEPROM |
| 生命周期状态 | 有效 | 停产 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.00 | $0.00 |
| 存储器类型 | NAND Flash | — |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| 封装 | BGA (surface mount) | [DATA_NEEDED: package] |
| 安装类型 | Surface Mount | — |
| RoHS 状态 | Lead free / RoHS compliant | — |
| Density | [DATA_NEEDED: density] | — |
| Memory Bus Width | [DATA_NEEDED: bus width] | — |
| 电源电压 | [DATA_NEEDED: supply voltage] | [DATA_NEEDED: supply voltage] |
| 接口 | [DATA_NEEDED: interface type] | [DATA_NEEDED: interface type] |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | — |
| 工作温度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature] |
| Program/Erase Cycles | [DATA_NEEDED: P/E cycle endurance] | [DATA_NEEDED: endurance] |
| MSL 等级 | [DATA_NEEDED: moisture sensitivity level] | — |
| Package Ball Count | [DATA_NEEDED: BGA ball count] | — |
| Device Type | — | 3D V-NAND flash memory bare die |
| Process Technology | — | Terabit Cell Array Transistor (TCAT) |
| Architecture | — | 3D vertical NAND (V-NAND) |
| Form Factor | — | Bare die (unpackaged) |
| Found In | — | Samsung K9HQGY8S5M-CCK0 and K9LPGY8S1M-CCK0 packages |
| Known Application | — | Samsung 850 Pro 128 GB SSD |
| Memory Class | — | Non-volatile NAND flash |
| Documented By | — | TechInsights report SAR-1407-802 |
| Capacity | — | [DATA_NEEDED: die capacity] |