K9PRGY8S7M-CCK0 vs K9ADGD8S0A 비교
다음의 상세 나란히 비교: K9PRGY8S7M-CCK0 제조: Samsung Electronics 및 K9ADGD8S0A 제조: Samsung Electronics. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | K9PRGY8S7M-CCK0 | K9ADGD8S0A |
|---|---|---|
| 브랜드 | Samsung Electronics | Samsung Electronics |
| 카테고리 | EEPROM | EEPROM |
| 수명 주기 상태 | 활성 | 수명 종료 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.00 | $0.00 |
| 메모리 유형 | NAND Flash | — |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| 패키지 | BGA (surface mount) | [DATA_NEEDED: package] |
| 실장 유형 | Surface Mount | — |
| RoHS 상태 | Lead free / RoHS compliant | — |
| Density | [DATA_NEEDED: density] | — |
| Memory Bus Width | [DATA_NEEDED: bus width] | — |
| 공급 전압 | [DATA_NEEDED: supply voltage] | [DATA_NEEDED: supply voltage] |
| 인터페이스 | [DATA_NEEDED: interface type] | [DATA_NEEDED: interface type] |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | — |
| 동작 온도 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature] |
| Program/Erase Cycles | [DATA_NEEDED: P/E cycle endurance] | [DATA_NEEDED: endurance] |
| MSL 레벨 | [DATA_NEEDED: moisture sensitivity level] | — |
| Package Ball Count | [DATA_NEEDED: BGA ball count] | — |
| Device Type | — | 3D V-NAND flash memory bare die |
| Process Technology | — | Terabit Cell Array Transistor (TCAT) |
| Architecture | — | 3D vertical NAND (V-NAND) |
| Form Factor | — | Bare die (unpackaged) |
| Found In | — | Samsung K9HQGY8S5M-CCK0 and K9LPGY8S1M-CCK0 packages |
| Known Application | — | Samsung 850 Pro 128 GB SSD |
| Memory Class | — | Non-volatile NAND flash |
| Documented By | — | TechInsights report SAR-1407-802 |
| Capacity | — | [DATA_NEEDED: die capacity] |